S25FL512SAG-HEC13

S25FL512SAG-HEC13
Mfr. #:
S25FL512SAG-HEC13
メーカー:
Cypress Semiconductor
説明:
NOR Flash
ライフサイクル:
メーカー新製品
データシート:
S25FL512SAG-HEC13 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
詳しくは:
S25FL512SAG-HEC13 詳しくは S25FL512SAG-HEC13 Product Details
製品属性
属性値
メーカー:
サイプレスセミコンダクタ
製品カテゴリ:
NORフラッシュ
JBoss:
Y
シリーズ:
S25FL512S
包装:
リール
ブランド:
サイプレスセミコンダクタ
製品タイプ:
NORフラッシュ
ファクトリーパックの数量:
2500
サブカテゴリ:
メモリとデータストレージ
商標名:
MirrorBit
Tags
S25FL512SAG-H, S25FL512SAG, S25FL512SA, S25FL512S, S25FL5, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
S25FL512S FL-S NOR Flash Memory Devices
Cypress S25FL512S FL-S NOR Flash Memory Devices are VIO VCC 2.7V to 3.6V flash non-volatile memory devices. These devices use 65nm MirrorBit technology. Designed using Eclipse™ architecture with a 512-byte page programming buffer. The 512-Mb S25FL512S FL-S NOR allows users to program up to 256 words (512 bytes) in one operation. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via an SPI and supports traditional SPI single bit serial input and output. Optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. The S25FL512S FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO that transfer address. The S25FL512S FL-S transfer address and read data on both edges of the clock. By using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the read transfer rate instruction can match traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL512S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. The S25FL512S FL-S NOR is ideal for code shadowing, XIP, and data storage.
画像 モデル 説明
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Mfr.#: S25FL512SAGBHIC13

OMO.#: OMO-S25FL512SAGBHIC13

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Mfr.#: S25FL512SAGBHV213

OMO.#: OMO-S25FL512SAGBHV213

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Mfr.#: S25FL512SAGBHVC13

OMO.#: OMO-S25FL512SAGBHVC13

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NOR Flash IC 512 Mb FLASH MEMORY
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Mfr.#: S25FL512SDSMFBG11

OMO.#: OMO-S25FL512SDSMFBG11-CYPRESS-SEMICONDUCTOR

Flash Memory 256-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 80MHZ DDR SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS, EHPLC, SO FOOTPRINT WITH RESET#, UNIFORM 256-KB SECTORS
S25FL512SDPBHV313

Mfr.#: S25FL512SDPBHV313

OMO.#: OMO-S25FL512SDPBHV313-CYPRESS-SEMICONDUCTOR

IC FLASH 512M SPI 66MHZ 24BGA FL-S
S25FL512SAGBHI213

Mfr.#: S25FL512SAGBHI213

OMO.#: OMO-S25FL512SAGBHI213-CYPRESS-SEMICONDUCTOR

IC FLASH 512M SPI 133MHZ 24BGA FL-S
可用性
ストック:
Available
注文中:
3000
数量を入力してください:
S25FL512SAG-HEC13の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
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