IPD30N06S4L23ATMA2

IPD30N06S4L23ATMA2
Mfr. #:
IPD30N06S4L23ATMA2
メーカー:
Infineon Technologies
説明:
MOSFET MOSFET
ライフサイクル:
メーカー新製品
データシート:
IPD30N06S4L23ATMA2 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPD30N06S4L23ATMA2 DatasheetIPD30N06S4L23ATMA2 Datasheet (P4-P6)IPD30N06S4L23ATMA2 Datasheet (P7-P9)
ECAD Model:
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
TO-252-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
構成:
独身
資格:
AEC-Q101
包装:
リール
高さ:
2.3 mm
長さ:
6.5 mm
シリーズ:
IPD30N06
トランジスタタイプ:
1 N-Channel
幅:
6.22 mm
ブランド:
インフィニオンテクノロジーズ
製品タイプ:
MOSFET
ファクトリーパックの数量:
2500
サブカテゴリ:
MOSFET
パーツ番号エイリアス:
IPD30N06S4L-23 IPD3N6S4L23XT SP001028638
単位重量:
0.139332 oz
Tags
IPD30N06S4, IPD30N06S, IPD30N06, IPD30N0, IPD30N, IPD30, IPD3, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 60V 30A Automotive 3-Pin(2+Tab) TO-252 T/R
***ical
Trans MOSFET N-CH 60V 30A Automotive 3-Pin(2+Tab) DPAK T/R
***et
Trans MOSFET N-CH 60V 30A 3-Pin(2+Tab) TO-252 T/R
***Components
MOSFET N-Ch 60V 30A OptiMOS-T2 TO-252
***et Europe
MOSFET N-CH 60V 30A TO252-3
***ronik
N-CH 60V 30A 23mOhm TO252
***ark
Mosfet, Aec-Q101, N-Ch, 60V, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.018Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 60V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:38W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T2 Series; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, AEC-Q101, CA-N, 60V, TO-252; Polarità Transistor:Canale N; Corrente Continua di Drain Id:30A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.018ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.7V; Dissipazione di Potenza Pd:38W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS T2 Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: N-channel - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
モデル メーカー 説明 ストック 価格
IPD30N06S4L23ATMA2
DISTI # V72:2272_06391013
Infineon Technologies AGTrans MOSFET N-CH 60V 30A Automotive 3-Pin(2+Tab) DPAK T/R2400
  • 1000:$0.2891
  • 500:$0.3376
  • 250:$0.3570
  • 100:$0.3730
  • 25:$0.5306
  • 10:$0.6486
  • 1:$0.7719
IPD30N06S4L23ATMA2
DISTI # V36:1790_06391013
Infineon Technologies AGTrans MOSFET N-CH 60V 30A Automotive 3-Pin(2+Tab) DPAK T/R0
    IPD30N06S4L23ATMA2
    DISTI # IPD30N06S4L23ATMA2CT-ND
    Infineon Technologies AGMOSFET N-CH 60V 30A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    3084In Stock
    • 1000:$0.3321
    • 500:$0.4151
    • 100:$0.5251
    • 10:$0.6850
    • 1:$0.7800
    IPD30N06S4L23ATMA2
    DISTI # IPD30N06S4L23ATMA2DKR-ND
    Infineon Technologies AGMOSFET N-CH 60V 30A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    3084In Stock
    • 1000:$0.3321
    • 500:$0.4151
    • 100:$0.5251
    • 10:$0.6850
    • 1:$0.7800
    IPD30N06S4L23ATMA2
    DISTI # IPD30N06S4L23ATMA2TR-ND
    Infineon Technologies AGMOSFET N-CH 60V 30A TO252-3
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)
    2500In Stock
    • 12500:$0.2687
    • 5000:$0.2720
    • 2500:$0.2922
    IPD30N06S4L23ATMA2
    DISTI # 31675415
    Infineon Technologies AGTrans MOSFET N-CH 60V 30A Automotive 3-Pin(2+Tab) DPAK T/R2400
    • 1000:$0.2891
    • 500:$0.3376
    • 250:$0.3570
    • 100:$0.3730
    • 25:$0.5306
    • 24:$0.6486
    IPD30N06S4L23ATMA2
    DISTI # IPD30N06S4L23ATMA2
    Infineon Technologies AGTrans MOSFET N-CH 60V 30A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD30N06S4L23ATMA2)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 25000:$0.2429
    • 15000:$0.2479
    • 10000:$0.2559
    • 5000:$0.2659
    • 2500:$0.2759
    IPD30N06S4L23ATMA2
    DISTI # 49AC0292
    Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 60V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.018ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power RoHS Compliant: Yes1579
    • 1000:$0.3110
    • 500:$0.3370
    • 250:$0.3620
    • 100:$0.3880
    • 50:$0.4590
    • 25:$0.5300
    • 10:$0.6010
    • 1:$0.7170
    IPD30N06S4L23ATMA2
    DISTI # 726-IPD30N06S4L23ATM
    Infineon Technologies AGMOSFET MOSFET
    RoHS: Compliant
    4173
    • 1:$0.7100
    • 10:$0.5950
    • 100:$0.3840
    • 1000:$0.3080
    • 2500:$0.2600
    • 10000:$0.2500
    • 25000:$0.2400
    IPD30N06S4L-23
    DISTI # 726-IPD30N06S4L-23
    Infineon Technologies AGMOSFET N-Ch 60V 30A DPAK-2 OptiMOS-T2
    RoHS: Compliant
    0
      IPD30N06S4L23ATMA2
      DISTI # 2839460
      Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 60V, TO-2521578
      • 500:£0.2370
      • 250:£0.2690
      • 100:£0.3020
      • 25:£0.4860
      • 5:£0.5270
      IPD30N06S4L23ATMA2
      DISTI # 2839460
      Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 60V, TO-252
      RoHS: Compliant
      1574
      • 5000:$0.4280
      • 1000:$0.4520
      • 500:$0.4770
      • 250:$0.5520
      • 100:$0.6540
      • 25:$0.8010
      • 5:$0.9190
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      OMO.#: OMO-L9945TR

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      OMO.#: OMO-RS1MFP

      Rectifiers 1000V 1.2A Surf Mnt Fast Rec Rectifier
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      OMO.#: OMO-NSVBAT54HT1G

      Schottky Diodes & Rectifiers SS SCHOTTKY DIODE
      SN74AHC1G08QDBVRQ1

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      Logic Gates Auto Cat Single 2 Input Pos AND Gate
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      Mfr.#: SN74HC4851QPWRQ1

      OMO.#: OMO-SN74HC4851QPWRQ1

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      Mfr.#: BTT6020-1EKA

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      Power Switch ICs - Power Distribution PROFET
      TPS57160QDGQRQ1

      Mfr.#: TPS57160QDGQRQ1

      OMO.#: OMO-TPS57160QDGQRQ1

      Switching Voltage Regulators 3.5-60V,1.5A Step Down SWIFT Converter
      TLS850D0TAV50ATMA1

      Mfr.#: TLS850D0TAV50ATMA1

      OMO.#: OMO-TLS850D0TAV50ATMA1

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      可用性
      ストック:
      Available
      注文中:
      1987
      数量を入力してください:
      IPD30N06S4L23ATMA2の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      参考価格(USD)
      単価
      小計金額
      1
      $0.71
      $0.71
      10
      $0.60
      $5.95
      100
      $0.38
      $38.40
      1000
      $0.31
      $308.00
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