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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| BSP372L6327HTSA1 DISTI # BSP372L6327HTSA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 1.7A SOT-223 Min Qty: 2000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP372L6327HTSA1 DISTI # BSP372L6327HTSA1CT-ND | Infineon Technologies AG | MOSFET N-CH 100V 1.7A SOT-223 Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSP372L6327HTSA1 DISTI # BSP372L6327HTSA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 1.7A SOT-223 Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSP372L6327HTSA1 DISTI # BSP372L6327HTSA1 | Infineon Technologies AG | MOSFET N-CH 100V 1.7A SOT-223 - Bulk (Alt: BSP372L6327HTSA1) Min Qty: 1786 Container: Bulk | Americas - 0 |
|
| BSP372L6327HTSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, N-Channel, MOSFET RoHS: Compliant | 200 |
|
| 画像 | モデル | 説明 |
|---|---|---|
|
Mfr.#: BSP372N H6327 OMO.#: OMO-BSP372N-H6327 |
MOSFET SMALL SIGNAL N-CH |
|
Mfr.#: BSP372 OMO.#: OMO-BSP372-1190 |
ブランドニューオリジナル |
|
|
Mfr.#: BSP372L6327 OMO.#: OMO-BSP372L6327-1190 |
POWER FIELD-EFFECT TRANSISTOR, 1.7A I(D), 100V, 0.31OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
|
Mfr.#: BSP372L6327HTSA1 |
MOSFET N-CH 100V 1.7A SOT-223 |
|
|
Mfr.#: BSP372L6327XT OMO.#: OMO-BSP372L6327XT-1190 |
ブランドニューオリジナル |
|
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Mfr.#: BSP372N OMO.#: OMO-BSP372N-1190 |
ブランドニューオリジナル |
|
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Mfr.#: BSP372N H6327 OMO.#: OMO-BSP372N-H6327-1190 |
MOSFET SMALL SIGNAL N-CH |
|
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Mfr.#: BSP372NH6327 OMO.#: OMO-BSP372NH6327-1190 |
ブランドニューオリジナル |
|
|
Mfr.#: BSP372NH6327XTSA1-CUT TAPE |
ブランドニューオリジナル |
|
|
Mfr.#: BSP372NH6327XTSA1 |
IGBT Transistors MOSFET SMALL SIGNAL N-CH |