We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| SIR882DP-T1-GE3 DISTI # V72:2272_09216058 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R RoHS: Compliant | 1 |
|
| SIR882DP-T1-GE3 DISTI # V36:1790_09216058 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R RoHS: Compliant | 0 |
|
| SIR882DP-T1-GE3 DISTI # SIR882DP-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 100V 60A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | On Order |
|
| SIR882DP-T1-GE3 DISTI # SIR882DP-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 100V 60A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
| SIR882DP-T1-GE3 DISTI # SIR882DP-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 100V 60A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
| SIR882DP-T1-GE3 DISTI # SIR882DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR882DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SIR882DP-T1-GE3 DISTI # 94T2661 | Vishay Intertechnologies | MOSFET, N CH, 100V, 60A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0071ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes | 0 |
|
| SIR882DP-T1-GE3 DISTI # 86R3813 | Vishay Intertechnologies | MOSFET, N CH, 100V, 60A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0071ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:83WRoHS Compliant: Yes | 0 |
|
| SIR882DP-T1-GE3 DISTI # 78-SIR882DP-T1-GE3 | Vishay Intertechnologies | MOSFET 100 Volts 60 Amps 83 Watts RoHS: Compliant | 0 |
|
| SIR882DP-T1-GE3 | Vishay Siliconix | POWER FIELD-EFFECT TRANSISTOR, 60A I(D), 100V, 0.0087OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 54 | |
| SIR882DP-T1-GE3 | Vishay Intertechnologies | MOSFET 100 Volts 60 Amps 83 Watts | Americas - 6000 | |
| SIR882DP-T1-GE3 DISTI # 1859000 | Vishay Intertechnologies | MOSFET,N CH,DIODE,100V,60A,PPAKSO8 RoHS: Compliant | 6 |
|
| SIR882DP-T1-GE3 DISTI # 1859000 | Vishay Intertechnologies | MOSFET,N CH,DIODE,100V,60A,PPAKSO8 | 0 |
|
| 画像 | モデル | 説明 |
|---|---|---|
|
Mfr.#: SIR882DP-T1-GE3 OMO.#: OMO-SIR882DP-T1-GE3 |
MOSFET 100 Volts 60 Amps 83 Watts |
|
|
Mfr.#: SIR846DP-T1-GE3 OMO.#: OMO-SIR846DP-T1-GE3 |
MOSFET 100V 60A 104W 7.8mohm @ 10V |
|
|
Mfr.#: SIR876DP-T1-GE3 OMO.#: OMO-SIR876DP-T1-GE3 |
MOSFET RECOMMENDED ALT 78-SIR876ADP-T1-GE3 |
|
Mfr.#: SIR800DP OMO.#: OMO-SIR800DP-1190 |
ブランドニューオリジナル |
|
|
Mfr.#: SIR81004F00A1 OMO.#: OMO-SIR81004F00A1-1190 |
ブランドニューオリジナル |
|
Mfr.#: SIR836DP-T1-GE3 OMO.#: OMO-SIR836DP-T1-GE3-VISHAY |
MOSFET N-CH 40V 21A PPAK SO-8 |
|
|
Mfr.#: SIR850DPT1GE3 OMO.#: OMO-SIR850DPT1GE3-1190 |
ブランドニューオリジナル |
|
|
Mfr.#: SIR870DP-T1-GE3 OMO.#: OMO-SIR870DP-T1-GE3-VISHAY |
MOSFET N-CH 100V 60A PPAK SO-8 |
|
|
Mfr.#: SIR888DP-T1-GE3 OMO.#: OMO-SIR888DP-T1-GE3-VISHAY |
MOSFET N-CH 25V 40A PPAK SO-8 |
|
|
Mfr.#: SIR892AK OMO.#: OMO-SIR892AK-1190 |
ブランドニューオリジナル |