IS43R86400D-6TLI

IS43R86400D-6TLI
Mfr. #:
IS43R86400D-6TLI
メーカー:
ISSI
説明:
DRAM 512M (64Mx8) 166MHz 2.5v DDR SDRAM
ライフサイクル:
メーカー新製品
データシート:
IS43R86400D-6TLI データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
IS43R86400D-6TLI 詳しくは
製品属性
属性値
メーカー:
ISSI
製品カテゴリ:
DRAM
JBoss:
Y
タイプ:
SDRAM - DDR1
データバス幅:
8 bit
組織:
64 M x 8
パッケージ/ケース:
TSOP-66
メモリー容量:
512 Mbit
最大クロック周波数:
166 MHz
アクセス時間:
6 ns
供給電圧-最大:
2.7 V
供給電圧-最小:
2.3 V
供給電流-最大:
370 mA
最低動作温度:
- 40 C
最高作動温度:
+ 85 C
シリーズ:
IS43R86400D
包装:
トレイ
ブランド:
ISSI
取り付けスタイル:
SMD / SMT
感湿性:
はい
動作供給電圧:
2.5 V
製品タイプ:
DRAM
ファクトリーパックの数量:
108
サブカテゴリ:
メモリとデータストレージ
単位重量:
0.019612 oz
Tags
IS43R86400D-6TLI, IS43R86400D-6T, IS43R86400D-6, IS43R86400D, IS43R86400, IS43R86, IS43R8, IS43R, IS43, IS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E***s
    E***s
    US

    Tittle claims 20PCS but description states 10PCS. I would suggest changing the tittle to match the description to prevent confusion. Other than that, the product is as described.

    2019-05-07
    N***k
    N***k
    BY

    Fast delivery, i liked everything, i recommend the seller.

    2019-08-20
    S***v
    S***v
    RU

    All the norms, received. At first glance, everything is in place. Then i will add, if that is not so

    2019-04-30
***et
DRAM Chip DDR SDRAM 512Mbit 64M X 8 2.5V 66-Pin TSOP-II Tray
***ark
512M, 2.5v, DDR, 64Mx8, 166MHz, 66 pin TSOP II (400 mil) RoHS, IT
***I SCT
DDR SDRAM, 64Mx8, 2.5V, 8K, TSOP2-66,RoHS
***ponent Sense
IC DRAM DDR 512M 64MX8 6NS TSO
DDR SDRAM
ISSI's 512-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 536,870,912-bit memory array is internally organized as four banks of 128Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence and CAS latency enable further advantages. The device is available in 8-bit, 16-bit and 32-bit data word size Input data is registered on the I/O pins on both edges of Data Strobe signal(s), while output data is referenced to both edges of Data Strobe and both edges of CLK. Commands are registered on the positive edges of CLK.Learn More
IS43R32800D 8Mx32 256-Mbit DDR SDRAM
ISSI IS43R32800D 8Mx32 256-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory array is internally organized as four banks of 64Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence and CAS latency enable further advantages.
IS43R86400D 512Mb DDR SDRAM
ISSI IS43R86400D 512Mb DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 536,870,912-bit memory array is internally organized as four banks of 128Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. ISSI IS43R86400D 512Mb DDR SDRAM features programmable burst length, burst sequence, and CAS latency, enabling further advantages.
モデル メーカー 説明 ストック 価格
IS43R86400D-6TLI
DISTI # 26639538
Integrated Silicon Solution IncDRAM Chip DDR SDRAM 512Mbit 64Mx8 2.5V 66-Pin TSOP-II
RoHS: Compliant
6588
  • 108:$7.5940
IS43R86400D-6TLI
DISTI # IS43R86400D-6TLI-ND
Integrated Silicon Solution IncIC DRAM 512M PARALLEL 66TSOP II
RoHS: Compliant
Min Qty: 108
Container: Tray
Temporarily Out of Stock
  • 108:$7.5940
IS43R86400D-6TLI-TR
DISTI # IS43R86400D-6TLI-TR-ND
Integrated Silicon Solution IncIC DRAM 512M PARALLEL 66TSOP II
RoHS: Compliant
Min Qty: 1500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1500:$7.0157
IS43R86400D-6TLI
DISTI # IS43R86400D-6TLI
Integrated Silicon Solution IncDRAM Chip DDR SDRAM 512M-Bit 64M x 8 2.5V 66-Pin TSOP-II - Bulk (Alt: IS43R86400D-6TLI)
RoHS: Compliant
Min Qty: 108
Container: Bulk
Americas - 0
  • 108:$7.2900
  • 216:$6.9900
  • 432:$6.7900
  • 648:$6.4900
  • 1080:$6.2900
IS43R86400D-6TLI
DISTI # IS43R86400D-6TLI
Integrated Silicon Solution IncDRAM Chip DDR SDRAM 512Mbit 64M X 8 2.5V 66-Pin TSOP-II Tray (Alt: IS43R86400D-6TLI)
RoHS: Compliant
Min Qty: 1
Container: Tray
Europe - 0
  • 1:€7.9900
  • 10:€7.3900
  • 25:€7.0900
  • 50:€6.7900
  • 100:€6.4900
  • 500:€6.2900
  • 1000:€5.8900
IS43R86400D-6TLI-TR
DISTI # IS43R86400D-6TLI-TR
Integrated Silicon Solution Inc- Tape and Reel (Alt: IS43R86400D-6TLI-TR)
RoHS: Compliant
Min Qty: 1500
Container: Reel
Americas - 0
  • 1500:$7.3900
  • 3000:$7.1900
  • 6000:$6.8900
  • 9000:$6.5900
  • 15000:$6.3900
IS43R86400D-6TLI
DISTI # 870-IS43R86400D-6TLI
Integrated Silicon Solution IncDRAM 512M (64Mx8) 166MHz 2.5v DDR SDRAM
RoHS: Compliant
93
  • 1:$9.5800
  • 10:$8.8700
  • 25:$8.6700
  • 50:$8.6200
  • 100:$7.5900
  • 250:$7.2100
  • 500:$7.1400
  • 1000:$6.9000
IS43R86400D-6TLI-TR
DISTI # 870-43R86400D6TLITR
Integrated Silicon Solution IncDRAM 512M (64Mx8) 166MHz DDR 2.5v
RoHS: Compliant
0
  • 1:$9.7400
  • 10:$9.0100
  • 25:$8.8100
  • 50:$8.7600
  • 100:$7.7100
  • 250:$7.3300
  • 500:$7.2500
  • 1000:$7.0100
  • 1500:$6.4500
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Mfr.#: SDINBDG4-8G

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eMMC 8GB iNAND 7250 eMMC 5.1
MT29F1G08ABAFAWP-ITE:F

Mfr.#: MT29F1G08ABAFAWP-ITE:F

OMO.#: OMO-MT29F1G08ABAFAWP-ITE-F

NAND Flash SLC 1G 128MX8 TSOP
TC58NVG1S3HTAI0

Mfr.#: TC58NVG1S3HTAI0

OMO.#: OMO-TC58NVG1S3HTAI0

NAND Flash 3.3V 2Gb 24nm I-Temp SLC NAND (EEPROM)
S29GL032N11FFIS10

Mfr.#: S29GL032N11FFIS10

OMO.#: OMO-S29GL032N11FFIS10

NOR Flash Nor
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Mfr.#: 2SCR533P5T100

OMO.#: OMO-2SCR533P5T100

Bipolar Transistors - BJT NPN 50V Vceo 3A Ic MPT3
DS90CR215MTDX/NOPB

Mfr.#: DS90CR215MTDX/NOPB

OMO.#: OMO-DS90CR215MTDX-NOPB

LVDS Interface IC 3.3V LVDS 21B CH Link 66MHz
IS42S32200L-6TLI

Mfr.#: IS42S32200L-6TLI

OMO.#: OMO-IS42S32200L-6TLI

DRAM 64M (2Mx32) 166MHz SDR SDRAM, 3.3V
IS42S32200L-6TLI

Mfr.#: IS42S32200L-6TLI

OMO.#: OMO-IS42S32200L-6TLI-INTEGRATED-SILICON-SOLUTION

DRAM 64M (2Mx32) 166MHz SDR SDRAM, 3.3V
可用性
ストック:
167
注文中:
2150
数量を入力してください:
IS43R86400D-6TLIの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$9.58
$9.58
10
$8.87
$88.70
25
$8.67
$216.75
50
$8.62
$431.00
100
$7.59
$759.00
250
$7.21
$1 802.50
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