FDC6308P

Mfr. #:: FDC6308P
メーカー:: Rochester Electronics, LLC
説明:: MOSFET DISC BY MFG 2/02
ライフサイクル:: メーカー新製品
データシート:: FDC6308P データシート
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製品属性
属性値

Tags: FDC630, FDC63, FDC6, FDC

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDC6308P 説明

***et: Dual P-channel 2.5V Specified PowerTrench MOSFET

***S.I.T. Europe - USA - Asia: Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

*** Services: CoC and 2-years warranty / RFQ for pricing

***et Europe: Trans MOSFET N/P-CH 20V 3A/2.2A 6-Pin TSOT-23 T/R

***ure Electronics: Dual N/P-Channel 20 V 70 mOhm Surface Mount PowerTrench Mosfet - SSOT-6

***r Electronics: Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET, DUAL, NP, SMD, SUPERSOT-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:3A; Package / Case:SuperSOT-6; Power Dissipation Pd:960mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:900mV; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

***emi: P-Channel PowerTrench® MOSFET and Integrated Schottky Diode 20V -2.2A, 150mΩ

***ark: Transistor,mosfet,p-Channel,20V V(Br)Dss,2.2A I(D),so Rohs Compliant: Yes

***el Electronic: Chip Resistor - Surface Mount 120Ohm 0603 (1608 Metric) ±5% ±200ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 120 OHM 5% 1/4W 0603

***rchild Semiconductor: The FDC6392S combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with very low forward voltage drop Schottky barrier rectifier in an SSOT-6 package.This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.

*** Source Electronics: MOSFET N/P-CH 20V 2.7A 6-TSOP / Trans MOSFET N/P-CH Si 20V 2.7A/2.2A 6-Pin TSOP T/R

***ernational Rectifier: 20V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 6 package

***ment14 APAC: MOSFET, DUAL, NP, TSOP-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):135mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.25V; Power Dissipation Pd:960mW; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Application Code:LowR; Cont Current Id N Channel:2.7A; Cont Current Id P Channel:2.2A; Current Id Max:2.7A; Junction to Case Thermal Resistance A:62.5°C/W; On State Resistance Channel 1:90mohm; On State Resistance P Channel 2:135mohm; Package / Case:TSOP; Power Dissipation Pd:960mW; Power Dissipation Pd:960mW; Pulse Current Idm:9A; Pulse Current Idm N Channel:11A; Pulse Current Idm P Channel:9A; Termination Type:SMD; Voltage Vds N Channel 1:20V; Voltage Vds P Channel 1:20V; Voltage Vds Typ:20V; Voltage Vgs Max:1.25V; Voltage Vgs Rds on Measurement:4.5V

***ure Electronics: ZXMN2A01 Series 20 V 0.12 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3

***et: Trans MOSFET N-CH 20V 2.2A 3-Pin SOT-23 T/R

***ark: N CHANNEL MOSFET, 20V, 2.2A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current, Id:2.2A; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.12ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:700mV ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):120mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.2A; Current Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:120mohm; Package / Case:SOT-23; Power Dissipation Pd:625mW; Power Dissipation Pd:806mW; Power Dissipation Ptot Max:625mW; Pulse Current Idm:8A; SMD Marking:7N2; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Min:700mV

***ure Electronics: Dual N-Channel 20 V 0.125 Ohms Surface Mount Power Mosfet - TSOP-6

***et Europe: Transistor MOSFET Array Dual N-CH 20V 2A 6-Pin TSOP T/R

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2400mA; On Resistance, Rds(on):0.2ohm; Rds(on) Test Voltage, Vgs:12V ;RoHS Compliant: Yes

***nell: MOSFET, DUAL N CH, 20V, 0.1OHM, 2A, TSOP; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:830mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TSOP; No. of Pins:6; MSL:-

***ure Electronics: DMP2104V Series P-Channel 20 V 150 mOhm MosFet Surface Mount - SOT-563-6

***ical: Trans MOSFET P-CH 20V 1.9A Automotive 6-Pin SOT-563 T/R

***ark: Mosfet, P Channel, -20V, -860Ma, Sot-563; Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:860Ma; On Resistance Rds(On):0.15Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5Vrohs Compliant: Yes

***nell: MOSFET P-CHANNEL SOT-563; Transistor Polarity: P Channel; Continuous Drain Current Id: -950mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 170mW; Transistor Case Style: SOT-563; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: -860mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: -20V; Voltage Vgs Max: 12V; Voltage Vgs Rds on Measurement: -4.5V

Market price

モデル	メーカー	説明	ストック	価格
FDC6308P DISTI # 512-FDC6308P	ON Semiconductor	MOSFET DISC BY MFG 2/02 RoHS: Not compliant	0
FDC6308P	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	42000	1000:$0.5300 500:$0.5500 100:$0.5800 25:$0.6000 1:$0.6500
FDC6308P	Fairchild Semiconductor Corporation	MOSFET Transistor, Matched Pair, P-Channel, TSOP	2681	1363:$0.5170 305:$0.5875 1:$1.8800
FDC6308P	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant	1970

画像	モデル	説明
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FDC6308P

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes