SI4435DYTRPBF

SI4435DYTRPBF
Mfr. #:
SI4435DYTRPBF
メーカー:
Infineon Technologies
説明:
MOSFET P-CH 30V 8A 8-SOIC
ライフサイクル:
メーカー新製品
データシート:
SI4435DYTRPBF データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー
インフィニオン
製品カテゴリ
FET-シングル
シリーズ
HEXFETR
包装
Digi-ReelR代替パッケージ
単位重量
0.019048 oz
取り付けスタイル
SMD / SMT
パッケージ-ケース
8-SOIC (0.154", 3.90mm Width)
テクノロジー
Si
作動温度
-55°C ~ 150°C (TJ)
取付タイプ
表面実装
チャネル数
1 Channel
サプライヤー-デバイス-パッケージ
8-SO
構成
シングルクワッドドレイントリプルソース
FETタイプ
MOSFET Pチャネル、金属酸化物
パワーマックス
2.5W
トランジスタタイプ
1 P-Channel
Drain-to-Source-Voltage-Vdss
30V
入力-静電容量-Ciss-Vds
2320pF @ 15V
FET機能
標準
Current-Continuous-Drain-Id-25°C
8A (Tc)
Rds-On-Max-Id-Vgs
20 mOhm @ 8A, 10V
Vgs-th-Max-Id
1V @ 250μA
ゲートチャージ-Qg-Vgs
60nC @ 10V
Pd-電力損失
2.5 W
最高作動温度
+ 150 C
最低作動温度
- 55 C
立ち下がり時間
90 ns
立ち上がり時間
76 ns
Vgs-Gate-Source-Voltage
20 V
Id-連続-ドレイン-電流
- 8 A
Vds-ドレイン-ソース-ブレークダウン-電圧
- 30 V
Rds-On-Drain-Source-Resistance
35 mOhms
トランジスタ-極性
Pチャネル
典型的なターンオフ遅延時間
130 ns
典型的なターンオン遅延時間
16 ns
Qg-Gate-Charge
40 nC
チャネルモード
強化
Tags
SI4435DYT, SI4435DY, SI4435D, SI4435, SI443, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.015Ohm; ID -8A; SO-8; PD 2.5W; VGS +/-20V; -55
***ure Electronics
Single P-Channel 30 V 0.02 Ohm 40 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ment14 APAC
P CHANNEL MOSFET, 8A; TRANSISTOR POLARIT; P CHANNEL MOSFET, 8A; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:2.5W
モデル メーカー 説明 ストック 価格
SI4435DYTRPBF
DISTI # V72:2272_13891298
Infineon Technologies AGTrans MOSFET P-CH Si 30V 8A 8-Pin SOIC T/R
RoHS: Compliant
7187
  • 6000:$0.3202
  • 3000:$0.3536
  • 1000:$0.3542
  • 500:$0.4286
  • 250:$0.4731
  • 100:$0.4745
  • 25:$0.5797
  • 10:$0.5822
  • 1:$0.6573
SI4435DYTRPBF
DISTI # SI4435DYPBFCT-ND
Infineon Technologies AGMOSFET P-CH 30V 8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
38556In Stock
  • 1000:$0.4334
  • 500:$0.5489
  • 100:$0.7078
  • 10:$0.8960
  • 1:$1.0100
SI4435DYTRPBF
DISTI # SI4435DYPBFDKR-ND
Infineon Technologies AGMOSFET P-CH 30V 8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
38556In Stock
  • 1000:$0.4334
  • 500:$0.5489
  • 100:$0.7078
  • 10:$0.8960
  • 1:$1.0100
SI4435DYTRPBF
DISTI # SI4435DYPBFTR-ND
Infineon Technologies AGMOSFET P-CH 30V 8A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
36000In Stock
  • 4000:$0.3927
SI4435DYTRPBF
DISTI # 30306933
Infineon Technologies AGTrans MOSFET P-CH Si 30V 8A 8-Pin SOIC T/R
RoHS: Compliant
7187
  • 6000:$0.3202
  • 3000:$0.3536
  • 1000:$0.3542
  • 500:$0.4286
  • 250:$0.4731
  • 100:$0.4745
  • 25:$0.5797
  • 23:$0.5822
SI4435DYTRPBF
DISTI # 30746472
Infineon Technologies AGTrans MOSFET P-CH Si 30V 8A 8-Pin SOIC T/R
RoHS: Compliant
4000
  • 4000:$0.2873
SI4435DYTRPBF
DISTI # SI4435DYTRPBF
Infineon Technologies AGTrans MOSFET P-CH 30V 8A 8-Pin SOIC T/R (Alt: SI4435DYTRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel
Asia - 0
    SI4435DYTRPBF
    DISTI # SI4435DYTRPBF
    Infineon Technologies AGTrans MOSFET P-CH 30V 8A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4435DYTRPBF)
    RoHS: Compliant
    Min Qty: 4000
    Container: Reel
    Americas - 0
    • 4000:$0.3609
    • 8000:$0.3479
    • 16000:$0.3349
    • 24000:$0.3239
    • 40000:$0.3179
    SI4435DYTRPBF
    DISTI # SP001573756
    Infineon Technologies AGTrans MOSFET P-CH 30V 8A 8-Pin SOIC T/R (Alt: SP001573756)
    RoHS: Compliant
    Min Qty: 4000
    Container: Tape and Reel
    Europe - 0
    • 4000:€0.2949
    • 8000:€0.2409
    • 16000:€0.2209
    • 24000:€0.2039
    • 40000:€0.1899
    SI4435DYTRPBF
    DISTI # 39M3596
    Infineon Technologies AGP CHANNEL MOSFET, 8A,Transistor Polarity:P Channel,Continuous Drain Current Id:-8A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):35mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:2.5W , RoHS Compliant: Yes1798
    • 1:$0.8400
    • 25:$0.7140
    • 50:$0.6320
    • 100:$0.5490
    • 250:$0.5170
    • 500:$0.4850
    • 1000:$0.3830
    SI4435DYTRPBF
    DISTI # 31K5362
    Infineon Technologies AGMOSFET Transistor, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-8A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):20mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1V,No. of Pins:8Pins , RoHS Compliant: Yes0
    • 1:$0.3400
    • 4000:$0.3400
    SI4435DYTRPBF.
    DISTI # 28AC2139
    Infineon Technologies AGTRENCH_MOSFETS , ROHS COMPLIANT: YES0
    • 1:$0.3400
    • 4000:$0.3400
    SI4435DYTRPBF
    DISTI # 70017416
    Infineon Technologies AGMOSFET,Power,P-Ch,VDSS -30V,RDS(ON) 0.015Ohm,ID -8A,SO-8,PD 2.5W,VGS +/-20V,-55
    RoHS: Compliant
    0
    • 4000:$0.3530
    • 8000:$0.3460
    • 20000:$0.3350
    SI4435DYTRPBF
    DISTI # 942-SI4435DYTRPBF
    Infineon Technologies AGMOSFET HEXFET P-CH Low 0.020 Ohm -30V
    RoHS: Compliant
    3619
    • 1:$0.8400
    • 10:$0.7140
    • 100:$0.5490
    • 500:$0.4850
    • 1000:$0.3830
    • 4000:$0.3400
    SI4435DYTRPBFInternational Rectifier 10
    • 6:$0.9000
    SI4435DYTRPBFFairchild Semiconductor Corporation 1913
      SI4435DYTRPBFInternational Rectifier8 A, 30 V, 0.02 OHM, P-CHANNEL, SI, POWER, MOSFET, MS-012AA, SO-825
      • 6:$0.7200
      • 1:$0.9600
      SI4435DYTRPBFInternational Rectifier8 A, 30 V, 0.02 OHM, P-CHANNEL, SI, POWER, MOSFET, MS-012AA, SO-88
      • 5:$0.9600
      • 1:$1.2000
      SI4435DYTRPBF
      DISTI # 1702264
      Infineon Technologies AGMOSFET P-CH 30V 8A HEXFET SOIC8, RL7850
      • 4000:£0.2510
      • 8000:£0.2400
      • 12000:£0.2310
      SI4435DYTRPBF
      DISTI # 2577192
      Infineon Technologies AGMOSFET, P-CH, -30V, -8A, SOIC-8
      RoHS: Compliant
      7760
      • 5:£0.5510
      • 25:£0.4720
      • 100:£0.3930
      • 250:£0.3690
      • 500:£0.3440
      SI4435DYTRPBF
      DISTI # 2577235
      Infineon Technologies AG(Alternate Part Number: SP001573756
      RoHS: Compliant
      0
      • 4000:$0.6220
      SI4435DYTRPBF
      DISTI # 2577192
      Infineon Technologies AGMOSFET, P-CH, -30V, -8A, SOIC-8
      RoHS: Compliant
      7676
      • 1:$1.3400
      • 10:$1.1400
      • 100:$0.8690
      • 500:$0.7680
      • 1000:$0.6060
      • 4000:$0.5380
      SI4435DYTRPBF.
      DISTI # 1374896
      Infineon Technologies AGP CHANNEL MOSFET, 8A
      RoHS: Compliant
      1798
      • 1:$1.3400
      • 10:$1.1400
      • 100:$0.8690
      • 500:$0.7680
      • 1000:$0.6060
      • 4000:$0.5380
      SI4435DYTRPBF
      DISTI # C1S322000510418
      Infineon Technologies AGMOSFETs7252
      • 250:$0.4731
      • 100:$0.4745
      • 25:$0.5797
      • 10:$0.5823
      SI4435DYTRPBF
      DISTI # C1S322000510427
      Infineon Technologies AGMOSFETs4000
      • 4000:$0.3220
      画像 モデル 説明
      SI4435DDY-T1-E3

      Mfr.#: SI4435DDY-T1-E3

      OMO.#: OMO-SI4435DDY-T1-E3

      MOSFET -30V Vds 20V Vgs SO-8
      SI4435DDY-T1-GE3-CUT TAPE

      Mfr.#: SI4435DDY-T1-GE3-CUT TAPE

      OMO.#: OMO-SI4435DDY-T1-GE3-CUT-TAPE-1190

      ブランドニューオリジナル
      SI4435BDY

      Mfr.#: SI4435BDY

      OMO.#: OMO-SI4435BDY-1190

      ブランドニューオリジナル
      SI4435BDY-T1-E3

      Mfr.#: SI4435BDY-T1-E3

      OMO.#: OMO-SI4435BDY-T1-E3-VISHAY

      MOSFET P-CH 30V 7A 8-SOIC
      SI4435DY

      Mfr.#: SI4435DY

      OMO.#: OMO-SI4435DY-ON-SEMICONDUCTOR

      MOSFET P-CH 30V 8.8A 8-SOIC
      SI4435DY-NL

      Mfr.#: SI4435DY-NL

      OMO.#: OMO-SI4435DY-NL-1190

      ブランドニューオリジナル
      SI4435DY-REVA

      Mfr.#: SI4435DY-REVA

      OMO.#: OMO-SI4435DY-REVA-1190

      MOSFET 30V 8A 2.5W
      SI4435DY-TI

      Mfr.#: SI4435DY-TI

      OMO.#: OMO-SI4435DY-TI-1190

      ブランドニューオリジナル
      SI4435DYPBF

      Mfr.#: SI4435DYPBF

      OMO.#: OMO-SI4435DYPBF-INFINEON-TECHNOLOGIES

      MOSFET P-CH 30V 8A 8-SOIC
      SI4435DYTR

      Mfr.#: SI4435DYTR

      OMO.#: OMO-SI4435DYTR-INFINEON-TECHNOLOGIES

      MOSFET P-CH 30V 8A 8-SOIC
      可用性
      ストック:
      Available
      注文中:
      5000
      数量を入力してください:
      SI4435DYTRPBFの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      参考価格(USD)
      単価
      小計金額
      1
      $0.31
      $0.31
      10
      $0.29
      $2.93
      100
      $0.28
      $27.77
      500
      $0.26
      $131.15
      1000
      $0.25
      $246.80
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