| Mfr. #: | 2ST501T |
|---|---|
| メーカー: | STMicroelectronics |
| 説明: | Darlington Transistors PWR BIP/S.SIGNAL |
| ライフサイクル: | メーカー新製品 |
| データシート: | 2ST501T データシート |
Product belongs to the 2ST501 series. Tube is the packaging method for this product Weight of 0.081130 oz Through Hole Mounting-Style TO-220-3 Through Hole mounting type Supplier device package: TO-220AB Configuration Single Transistor type: NPN - Darlington Maximum current collector Ic is 4A . Maximum collector-emitter breakdown voltage of 350V DC current gain minimum (hFE) of Ic/Vce at 2000 @ 2A, 2V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1.5V @ 2mA, 2A Power-off control: 100 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 350 V The transistor polarity is NPN. 5 V rating of 5 V This product is capable of handling a 4 A continuous collector current. Minimum hfe for DC collector-base gain is 2000. 500 uA Maximum Collector Cut-off Current;
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
2ST501T Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed 2ST501
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.081130 oz.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is TO-220-3.
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Through Hole.
A: What is the Supplier-Device-Package of the product?
Q: The Supplier-Device-Package of the product is TO-220AB.
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is NPN - Darlington.
A: What is the Current-Collector-Ic-Max of the product?
Q: The Current-Collector-Ic-Max of the product is 4A.
A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?
Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 350V
A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?
Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 2000 @ 2A, 2V.
A: What is the Vce-Saturation-Max-Ib-Ic of the product?
Q: The Vce-Saturation-Max-Ib-Ic of the product is 1.5V @ 2mA, 2A.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 100 W.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C
A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?
Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 350 V
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is NPN.
A: At what frequency does the Emitter-Base-Voltage-VEBO?
Q: The product Emitter-Base-Voltage-VEBO is 5 V.
A: What is the Continuous-Collector-Current of the product?
Q: The Continuous-Collector-Current of the product is 4 A.
A: What is the DC-Collector-Base-Gain-hfe-Min of the product?
Q: The DC-Collector-Base-Gain-hfe-Min of the product is 2000.
A: Is the cutoff frequency of the product Maximum-Collector-Cut-off-Current?
Q: Yes, the product's Maximum-Collector-Cut-off-Current is indeed 500 uA