| Mfr. #: | BFU580GX |
|---|---|
| メーカー: | NXP Semiconductors |
| 説明: | RF Bipolar Transistors NPN wideband silicon RF transistor |
| ライフサイクル: | メーカー新製品 |
| データシート: | BFU580GX データシート |


This product is manufactured by NXP. The Transistor Type is Bipolar Wideband. The 60. The maximum 16 V. The minimum operating temperature of this product is - 40 C. The product can operate at a maximum temperature of + 150 C. This product has a Single configuration. The product can operate at a maximum temperature of SMD/SMT. SOT-223-4 package/case type is utilized by this product. Reel packaging for easy dispensing Maximum DC Current Gain hFE: 130 This device belongs to the Wideband RF Transistor type. NXP Semiconductors is a trusted brand for quality electronics The 11 GHz. 1000 mW RF Bipolar Transistors product type 1000 of 100 Transistors as subcategory This product is also known by the 934067974115 number of 934069005115. 1. 0.003447 oz of Unit Weight

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BFU580GX Specifications
A: At what frequency does the Manufacturer?
Q: The product Manufacturer is NXP.
A: At what frequency does the Transistor Type?
Q: The product Transistor Type is Bipolar Wideband.
A: What is the DC Collector/Base Gain hfe Min of the product?
Q: The DC Collector/Base Gain hfe Min of the product is 60.
A: Is the cutoff frequency of the product Collector- Emitter Voltage VCEO Max?
Q: Yes, the product's Collector- Emitter Voltage VCEO Max is indeed 16 V
A: At what frequency does the Minimum Operating Temperature?
Q: The product Minimum Operating Temperature is - 40 C.
A: Is the cutoff frequency of the product Maximum Operating Temperature?
Q: Yes, the product's Maximum Operating Temperature is indeed + 150 C
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: Is the cutoff frequency of the product Mounting Style?
Q: Yes, the product's Mounting Style is indeed SMD/SMT
A: What is the Package / Case of the product?
Q: The Package / Case of the product is SOT-223-4.
A: What is the Packaging of the product?
Q: The Packaging of the product is Reel.
A: Is the cutoff frequency of the product DC Current Gain hFE Max?
Q: Yes, the product's DC Current Gain hFE Max is indeed 130
A: Is the cutoff frequency of the product Type?
Q: Yes, the product's Type is indeed Wideband RF Transistor
A: At what frequency does the Brand?
Q: The product Brand is NXP Semiconductors.
A: At what frequency does the Gain Bandwidth Product fT?
Q: The product Gain Bandwidth Product fT is 11 GHz.
A: What is the Pd - Power Dissipation of the product?
Q: The Pd - Power Dissipation of the product is 1000 mW.
A: What is the Product Type of the product?
Q: The Product Type of the product is RF Bipolar Transistors.
A: What is the Factory Pack Quantity of the product?
Q: The Factory Pack Quantity of the product is 1000.
A: At what frequency does the Subcategory?
Q: The product Subcategory is Transistors.
A: What is the Part # Aliases of the product?
Q: The Part # Aliases of the product is 934067974115.
A: Is the cutoff frequency of the product Unit Weight?
Q: Yes, the product's Unit Weight is indeed 0.003447 oz