| Mfr. #: | BFU580QX |
|---|---|
| メーカー: | NXP Semiconductors |
| 説明: | RF Bipolar Transistors NPN wideband silicon RF transistor |
| ライフサイクル: | メーカー新製品 |
| データシート: | BFU580QX データシート |


This product is manufactured by NXP. The Transistor Type is Bipolar Wideband. The 60. The maximum 16 V. The minimum operating temperature of this product is - 40 C. The product can operate at a maximum temperature of + 150 C. This product has a Single configuration. The product can operate at a maximum temperature of SMD/SMT. SOT89-3 package/case type is utilized by this product. Reel packaging for easy dispensing Maximum DC Current Gain hFE: 130 This device belongs to the Wideband RF Transistor type. NXP Semiconductors is a trusted brand for quality electronics The 10.5 GHz. 1000 mW RF Bipolar Transistors product type 1000 of 100 Transistors as subcategory This product is also known by the 934067976115 number of 934069005115. 1. 0.001423 oz of Unit Weight

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BFU580QX Specifications
A: Is the cutoff frequency of the product Manufacturer?
Q: Yes, the product's Manufacturer is indeed NXP
A: At what frequency does the Transistor Type?
Q: The product Transistor Type is Bipolar Wideband.
A: At what frequency does the DC Collector/Base Gain hfe Min?
Q: The product DC Collector/Base Gain hfe Min is 60.
A: Is the cutoff frequency of the product Collector- Emitter Voltage VCEO Max?
Q: Yes, the product's Collector- Emitter Voltage VCEO Max is indeed 16 V
A: What is the Minimum Operating Temperature of the product?
Q: The Minimum Operating Temperature of the product is - 40 C.
A: What is the Maximum Operating Temperature of the product?
Q: The Maximum Operating Temperature of the product is + 150 C.
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: What is the Mounting Style of the product?
Q: The Mounting Style of the product is SMD/SMT.
A: At what frequency does the Package / Case?
Q: The product Package / Case is SOT89-3.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Reel
A: At what frequency does the DC Current Gain hFE Max?
Q: The product DC Current Gain hFE Max is 130.
A: What is the Type of the product?
Q: The Type of the product is Wideband RF Transistor.
A: Is the cutoff frequency of the product Brand?
Q: Yes, the product's Brand is indeed NXP Semiconductors
A: What is the Gain Bandwidth Product fT of the product?
Q: The Gain Bandwidth Product fT of the product is 10.5 GHz.
A: What is the Pd - Power Dissipation of the product?
Q: The Pd - Power Dissipation of the product is 1000 mW.
A: At what frequency does the Product Type?
Q: The product Product Type is RF Bipolar Transistors.
A: What is the Factory Pack Quantity of the product?
Q: The Factory Pack Quantity of the product is 1000.
A: Is the cutoff frequency of the product Subcategory?
Q: Yes, the product's Subcategory is indeed Transistors
A: At what frequency does the Part # Aliases?
Q: The product Part # Aliases is 934067976115.
A: Is the cutoff frequency of the product Unit Weight?
Q: Yes, the product's Unit Weight is indeed 0.001423 oz