CSD19531Q5AT

Mfr. #: CSD19531Q5AT
メーカー: Texas Instruments
説明: MOSFET 100V,5.3mOhm,NexFET Power MOSFET
ライフサイクル: メーカー新製品
データシート: CSD19531Q5AT データシート
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD19531Q5AT Overview

This product is manufactured by Texas Instruments. The product can operate at a maximum temperature of SMD/SMT. VSONP-8 package/case type is utilized by this product. This product is equipped with 1 Channel for efficient performance. Vds rating of 100 V 100 A continuous drain current Rds On value of 6.4 mOhms Gate-Source Threshold Voltage Range: 2.7 V Gate-Source Voltage: 20 V The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 150 C. 3.3 W This product has a Single configuration. The Channel Mode is set to Enhancement. The product's NexFET is Blue Gecko. Reel packaging for easy dispensing The height of the product is 1 mm. 6 mm long The Transistor Type is 1 N-Channel. This device belongs to the NexFET Power MOSFET type. Texas Instruments is a trusted brand for quality electronics Minimum forward transconductance of 82 S 5.2 ns fall time MOSFET product type Rise Time is 5.8 ns. 250 of 100 MOSFETs as subcategory Turn-off delay time is 18.4 ns. The typical turn-on delay time is 6 ns.

CSD19531Q5AT Image

CSD19531Q5AT

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD19531Q5AT Specifications
  • Manufacturer: Texas Instruments
  • Product Category: MOSFET
  • RoHS: E
  • Technology: Si
  • Mounting Style: SMD/SMT
  • Package / Case: VSONP-8
  • Number of Channels: 1 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 100 V
  • Id - Continuous Drain Current: 100 A
  • Rds On - Drain-Source Resistance: 6.4 mOhms
  • Vgs th - Gate-Source Threshold Voltage: 2.7 V
  • Vgs - Gate-Source Voltage: 20 V
  • Qg - Gate Charge: 37 nC
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 150 C
  • Pd - Power Dissipation: 3.3 W
  • Configuration: Single
  • Channel Mode: Enhancement
  • Tradename: NexFET
  • Packaging: Reel
  • Height: 1 mm
  • Length: 6 mm
  • Series: CSD19531Q5A
  • Transistor Type: 1 N-Channel
  • Type: NexFET Power MOSFET
  • Width: 4.9 mm
  • Brand: Texas Instruments
  • Forward Transconductance - Min: 82 S
  • Fall Time: 5.2 ns
  • Product Type: MOSFET
  • Rise Time: 5.8 ns
  • Factory Pack Quantity: 250
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 18.4 ns
  • Typical Turn-On Delay Time: 6 ns

CSD19531Q5AT

CSD19531Q5AT Specifications

CSD19531Q5AT FAQ
  • A: Is the cutoff frequency of the product Manufacturer?

    Q: Yes, the product's Manufacturer is indeed Texas Instruments

  • A: What is the Mounting Style of the product?

    Q: The Mounting Style of the product is SMD/SMT.

  • A: What is the Package / Case of the product?

    Q: The Package / Case of the product is VSONP-8.

  • A: At what frequency does the Number of Channels?

    Q: The product Number of Channels is 1 Channel.

  • A: What is the Vds - Drain-Source Breakdown Voltage of the product?

    Q: The Vds - Drain-Source Breakdown Voltage of the product is 100 V.

  • A: Is the cutoff frequency of the product Id - Continuous Drain Current?

    Q: Yes, the product's Id - Continuous Drain Current is indeed 100 A

  • A: At what frequency does the Rds On - Drain-Source Resistance?

    Q: The product Rds On - Drain-Source Resistance is 6.4 mOhms.

  • A: What is the Vgs th - Gate-Source Threshold Voltage of the product?

    Q: The Vgs th - Gate-Source Threshold Voltage of the product is 2.7 V.

  • A: At what frequency does the Vgs - Gate-Source Voltage?

    Q: The product Vgs - Gate-Source Voltage is 20 V.

  • A: What is the Minimum Operating Temperature of the product?

    Q: The Minimum Operating Temperature of the product is - 55 C.

  • A: At what frequency does the Maximum Operating Temperature?

    Q: The product Maximum Operating Temperature is + 150 C.

  • A: What is the Pd - Power Dissipation of the product?

    Q: The Pd - Power Dissipation of the product is 3.3 W.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: At what frequency does the Channel Mode?

    Q: The product Channel Mode is Enhancement.

  • A: At what frequency does the Tradename?

    Q: The product Tradename is NexFET.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: Is the cutoff frequency of the product Height?

    Q: Yes, the product's Height is indeed 1 mm

  • A: What is the Length of the product?

    Q: The Length of the product is 6 mm.

  • A: What is the Transistor Type of the product?

    Q: The Transistor Type of the product is 1 N-Channel.

  • A: Is the cutoff frequency of the product Type?

    Q: Yes, the product's Type is indeed NexFET Power MOSFET

  • A: What is the Brand of the product?

    Q: The Brand of the product is Texas Instruments.

  • A: Is the cutoff frequency of the product Forward Transconductance - Min?

    Q: Yes, the product's Forward Transconductance - Min is indeed 82 S

  • A: Is the cutoff frequency of the product Fall Time?

    Q: Yes, the product's Fall Time is indeed 5.2 ns

  • A: Is the cutoff frequency of the product Product Type?

    Q: Yes, the product's Product Type is indeed MOSFET

  • A: At what frequency does the Rise Time?

    Q: The product Rise Time is 5.8 ns.

  • A: At what frequency does the Factory Pack Quantity?

    Q: The product Factory Pack Quantity is 250.

  • A: Is the cutoff frequency of the product Subcategory?

    Q: Yes, the product's Subcategory is indeed MOSFETs

  • A: At what frequency does the Typical Turn-Off Delay Time?

    Q: The product Typical Turn-Off Delay Time is 18.4 ns.

  • A: Is the cutoff frequency of the product Typical Turn-On Delay Time?

    Q: Yes, the product's Typical Turn-On Delay Time is indeed 6 ns

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