| Mfr. #: | MRF085HR3 |
|---|---|
| メーカー: | NXP Semiconductors |
| 説明: | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 85 W CW over 1.8-1215 MHz, 50 V. |
| ライフサイクル: | メーカー新製品 |
| データシート: | MRF085HR3 データシート |
This product is manufactured by NXP. 210 mA continuous drain current Vds rating of - 500 mV, 133 V 25.6 dB is 11.5 dB. Output power: 85 W The minimum operating temperature of this product is - 40 C. The product can operate at a maximum temperature of + 150 C. The product can operate at a maximum temperature of SMD/SMT. NI-650H-4 package/case type is utilized by this product. Reel packaging for easy dispensing This device belongs to the RF Power MOSFET type. NXP Semiconductors is a trusted brand for quality electronics This product is equipped with 2 Channel for efficient performance. 235 W RF MOSFET Transistors product type 250 of 100 MOSFETs as subcategory Gate-Source Voltage: - 6 V, 10 V Gate-Source Threshold Voltage Range: 1.5 V This product is also known by the 935351494128 number of 934069005115. 1. 0 oz of Unit Weight
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
MRF085HR3 Specifications
A: What is the Manufacturer of the product?
Q: The Manufacturer of the product is NXP.
A: Is the cutoff frequency of the product Id - Continuous Drain Current?
Q: Yes, the product's Id - Continuous Drain Current is indeed 210 mA
A: At what frequency does the Vds - Drain-Source Breakdown Voltage?
Q: The product Vds - Drain-Source Breakdown Voltage is - 500 mV, 133 V.
A: At what frequency does the Gain?
Q: The product Gain is 25.6 dB.
A: What is the Output Power of the product?
Q: The Output Power of the product is 85 W.
A: Is the cutoff frequency of the product Minimum Operating Temperature?
Q: Yes, the product's Minimum Operating Temperature is indeed - 40 C
A: At what frequency does the Maximum Operating Temperature?
Q: The product Maximum Operating Temperature is + 150 C.
A: What is the Mounting Style of the product?
Q: The Mounting Style of the product is SMD/SMT.
A: At what frequency does the Package / Case?
Q: The product Package / Case is NI-650H-4.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Reel
A: Is the cutoff frequency of the product Type?
Q: Yes, the product's Type is indeed RF Power MOSFET
A: Is the cutoff frequency of the product Brand?
Q: Yes, the product's Brand is indeed NXP Semiconductors
A: At what frequency does the Number of Channels?
Q: The product Number of Channels is 2 Channel.
A: At what frequency does the Pd - Power Dissipation?
Q: The product Pd - Power Dissipation is 235 W.
A: What is the Product Type of the product?
Q: The Product Type of the product is RF MOSFET Transistors.
A: What is the Factory Pack Quantity of the product?
Q: The Factory Pack Quantity of the product is 250.
A: At what frequency does the Subcategory?
Q: The product Subcategory is MOSFETs.
A: What is the Vgs - Gate-Source Voltage of the product?
Q: The Vgs - Gate-Source Voltage of the product is - 6 V, 10 V.
A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?
Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 1.5 V
A: At what frequency does the Part # Aliases?
Q: The product Part # Aliases is 935351494128.
A: What is the Unit Weight of the product?
Q: The Unit Weight of the product is 0 oz.