| Mfr. #: | MRF101BN |
|---|---|
| メーカー: | NXP Semiconductors |
| 説明: | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V |
| ライフサイクル: | メーカー新製品 |
| データシート: | MRF101BN データシート |
This product is manufactured by NXP. 8.8 A continuous drain current Vds rating of 133 V 21.1 dB is 11.5 dB. Output power: 100 W The minimum operating temperature of this product is - 40 C. The product can operate at a maximum temperature of + 150 C. The product can operate at a maximum temperature of Through Hole. TO-220-3 package/case type is utilized by this product. Tube packaging for easy dispensing This device belongs to the RF Power MOSFET type. NXP Semiconductors is a trusted brand for quality electronics Minimum forward transconductance of 7.1 S This product is equipped with 1 Channel for efficient performance. 182 W RF MOSFET Transistors product type 250 of 100 MOSFETs as subcategory Gate-Source Voltage: - 6 V, + 10 V Gate-Source Threshold Voltage Range: 1.7 V This product is also known by the 935377234129 number of 934069005115.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
MRF101BN Specifications
A: At what frequency does the Manufacturer?
Q: The product Manufacturer is NXP.
A: Is the cutoff frequency of the product Id - Continuous Drain Current?
Q: Yes, the product's Id - Continuous Drain Current is indeed 8.8 A
A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?
Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 133 V
A: What is the Gain of the product?
Q: The Gain of the product is 21.1 dB.
A: At what frequency does the Output Power?
Q: The product Output Power is 100 W.
A: At what frequency does the Minimum Operating Temperature?
Q: The product Minimum Operating Temperature is - 40 C.
A: At what frequency does the Maximum Operating Temperature?
Q: The product Maximum Operating Temperature is + 150 C.
A: What is the Mounting Style of the product?
Q: The Mounting Style of the product is Through Hole.
A: Is the cutoff frequency of the product Package / Case?
Q: Yes, the product's Package / Case is indeed TO-220-3
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: What is the Type of the product?
Q: The Type of the product is RF Power MOSFET.
A: Is the cutoff frequency of the product Brand?
Q: Yes, the product's Brand is indeed NXP Semiconductors
A: Is the cutoff frequency of the product Forward Transconductance - Min?
Q: Yes, the product's Forward Transconductance - Min is indeed 7.1 S
A: Is the cutoff frequency of the product Number of Channels?
Q: Yes, the product's Number of Channels is indeed 1 Channel
A: Is the cutoff frequency of the product Pd - Power Dissipation?
Q: Yes, the product's Pd - Power Dissipation is indeed 182 W
A: What is the Product Type of the product?
Q: The Product Type of the product is RF MOSFET Transistors.
A: What is the Factory Pack Quantity of the product?
Q: The Factory Pack Quantity of the product is 250.
A: At what frequency does the Subcategory?
Q: The product Subcategory is MOSFETs.
A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?
Q: Yes, the product's Vgs - Gate-Source Voltage is indeed - 6 V, + 10 V
A: At what frequency does the Vgs th - Gate-Source Threshold Voltage?
Q: The product Vgs th - Gate-Source Threshold Voltage is 1.7 V.
A: Is the cutoff frequency of the product Part # Aliases?
Q: Yes, the product's Part # Aliases is indeed 935377234129