MRF13750HR5

MRF13750HR5 Overview

This product is manufactured by NXP. 2.8 A continuous drain current Vds rating of - 500 mV, 105 V 20.5 dB is 11.5 dB. Output power: 750 W The minimum operating temperature of this product is - 40 C. The product can operate at a maximum temperature of + 150 C. The product can operate at a maximum temperature of SMD/SMT. NI-1230H-4 package/case type is utilized by this product. Reel packaging for easy dispensing This device belongs to the RF Power MOSFET type. NXP Semiconductors is a trusted brand for quality electronics This product is equipped with 2 Channel for efficient performance. 1.333 kW RF MOSFET Transistors product type 50 of 100 MOSFETs as subcategory Gate-Source Voltage: - 6 V, 10 V Gate-Source Threshold Voltage Range: 1.3 V This product is also known by the 935360897178 number of 934069005115. 1. 0.464343 oz of Unit Weight

MRF13750HR5 Image

MRF13750HR5 Specifications

• Manufacturer: NXP
• Product Category: RF MOSFET Transistors
• RoHS: Y
• Transistor Polarity: Dual N-Channel
• Technology: Si
• Id - Continuous Drain Current: 2.8 A
• Vds - Drain-Source Breakdown Voltage: - 500 mV, 105 V
• Gain: 20.5 dB
• Output Power: 750 W
• Minimum Operating Temperature: - 40 C
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: NI-1230H-4
• Packaging: Reel
• Operating Frequency: 700 MHz to 1300 MHz
• Series: MRF13750H
• Type: RF Power MOSFET
• Brand: NXP Semiconductors
• Number of Channels: 2 Channel
• Pd - Power Dissipation: 1.333 kW
• Product Type: RF MOSFET Transistors
• Factory Pack Quantity: 50
• Subcategory: MOSFETs
• Vgs - Gate-Source Voltage: - 6 V, 10 V
• Vgs th - Gate-Source Threshold Voltage: 1.3 V
• Part # Aliases: 935360897178
• Unit Weight: 0.464343 oz

MRF13750HR5 FAQ

• A: Is the cutoff frequency of the product Manufacturer?

  Q: Yes, the product's Manufacturer is indeed NXP

• A: What is the Id - Continuous Drain Current of the product?

  Q: The Id - Continuous Drain Current of the product is 2.8 A.

• A: At what frequency does the Vds - Drain-Source Breakdown Voltage?

  Q: The product Vds - Drain-Source Breakdown Voltage is - 500 mV, 105 V.

• A: What is the Gain of the product?

  Q: The Gain of the product is 20.5 dB.

• A: At what frequency does the Output Power?

  Q: The product Output Power is 750 W.

• A: Is the cutoff frequency of the product Minimum Operating Temperature?

  Q: Yes, the product's Minimum Operating Temperature is indeed - 40 C

• A: What is the Maximum Operating Temperature of the product?

  Q: The Maximum Operating Temperature of the product is + 150 C.

• A: What is the Mounting Style of the product?

  Q: The Mounting Style of the product is SMD/SMT.

• A: At what frequency does the Package / Case?

  Q: The product Package / Case is NI-1230H-4.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Reel

• A: At what frequency does the Type?

  Q: The product Type is RF Power MOSFET.

• A: At what frequency does the Brand?

  Q: The product Brand is NXP Semiconductors.

• A: What is the Number of Channels of the product?

  Q: The Number of Channels of the product is 2 Channel.

• A: Is the cutoff frequency of the product Pd - Power Dissipation?

  Q: Yes, the product's Pd - Power Dissipation is indeed 1.333 kW

• A: At what frequency does the Product Type?

  Q: The product Product Type is RF MOSFET Transistors.

• A: What is the Factory Pack Quantity of the product?

  Q: The Factory Pack Quantity of the product is 50.

• A: At what frequency does the Subcategory?

  Q: The product Subcategory is MOSFETs.

• A: What is the Vgs - Gate-Source Voltage of the product?

  Q: The Vgs - Gate-Source Voltage of the product is - 6 V, 10 V.

• A: At what frequency does the Vgs th - Gate-Source Threshold Voltage?

  Q: The product Vgs th - Gate-Source Threshold Voltage is 1.3 V.

• A: What is the Part # Aliases of the product?

  Q: The Part # Aliases of the product is 935360897178.

• A: At what frequency does the Unit Weight?

  Q: The product Unit Weight is 0.464343 oz.