MRFX600HSR5

MRFX600HSR5 Overview

This product is manufactured by NXP. 32 A continuous drain current Vds rating of 193 V 26.4 dB is 11.5 dB. Output power: 600 W The minimum operating temperature of this product is - 40 C. The product can operate at a maximum temperature of + 150 C. The product can operate at a maximum temperature of SMD/SMT. NI-780S-4L package/case type is utilized by this product. Reel packaging for easy dispensing This device belongs to the RF Power MOSFET type. NXP Semiconductors is a trusted brand for quality electronics This product is equipped with 2 Channel for efficient performance. 1.333 kW RF MOSFET Transistors product type 50 of 100 MOSFETs as subcategory Gate-Source Voltage: - 6 V, 10 V Gate-Source Threshold Voltage Range: 2.1 V This product is also known by the 935376371178 number of 934069005115.

MRFX600HSR5 Image

MRFX600HSR5 Specifications

• Manufacturer: NXP
• Product Category: RF MOSFET Transistors
• RoHS: Y
• Transistor Polarity: N-Channel
• Technology: Si
• Id - Continuous Drain Current: 32 A
• Vds - Drain-Source Breakdown Voltage: 193 V
• Gain: 26.4 dB
• Output Power: 600 W
• Minimum Operating Temperature: - 40 C
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: NI-780S-4L
• Packaging: Reel
• Operating Frequency: 1.8 MHz to 400 MHz
• Series: MRFX600
• Type: RF Power MOSFET
• Brand: NXP Semiconductors
• Number of Channels: 2 Channel
• Pd - Power Dissipation: 1.333 kW
• Product Type: RF MOSFET Transistors
• Factory Pack Quantity: 50
• Subcategory: MOSFETs
• Vgs - Gate-Source Voltage: - 6 V, 10 V
• Vgs th - Gate-Source Threshold Voltage: 2.1 V
• Part # Aliases: 935376371178

MRFX600HSR5 FAQ

• A: Is the cutoff frequency of the product Manufacturer?

  Q: Yes, the product's Manufacturer is indeed NXP

• A: What is the Id - Continuous Drain Current of the product?

  Q: The Id - Continuous Drain Current of the product is 32 A.

• A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?

  Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 193 V

• A: At what frequency does the Gain?

  Q: The product Gain is 26.4 dB.

• A: Is the cutoff frequency of the product Output Power?

  Q: Yes, the product's Output Power is indeed 600 W

• A: Is the cutoff frequency of the product Minimum Operating Temperature?

  Q: Yes, the product's Minimum Operating Temperature is indeed - 40 C

• A: Is the cutoff frequency of the product Maximum Operating Temperature?

  Q: Yes, the product's Maximum Operating Temperature is indeed + 150 C

• A: At what frequency does the Mounting Style?

  Q: The product Mounting Style is SMD/SMT.

• A: At what frequency does the Package / Case?

  Q: The product Package / Case is NI-780S-4L.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Reel

• A: Is the cutoff frequency of the product Type?

  Q: Yes, the product's Type is indeed RF Power MOSFET

• A: Is the cutoff frequency of the product Brand?

  Q: Yes, the product's Brand is indeed NXP Semiconductors

• A: What is the Number of Channels of the product?

  Q: The Number of Channels of the product is 2 Channel.

• A: What is the Pd - Power Dissipation of the product?

  Q: The Pd - Power Dissipation of the product is 1.333 kW.

• A: What is the Product Type of the product?

  Q: The Product Type of the product is RF MOSFET Transistors.

• A: What is the Factory Pack Quantity of the product?

  Q: The Factory Pack Quantity of the product is 50.

• A: At what frequency does the Subcategory?

  Q: The product Subcategory is MOSFETs.

• A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?

  Q: Yes, the product's Vgs - Gate-Source Voltage is indeed - 6 V, 10 V

• A: What is the Vgs th - Gate-Source Threshold Voltage of the product?

  Q: The Vgs th - Gate-Source Threshold Voltage of the product is 2.1 V.

• A: What is the Part # Aliases of the product?

  Q: The Part # Aliases of the product is 935376371178.