STFI12N60M2

Mfr. #: STFI12N60M2
メーカー: STMicroelectronics
説明: MOSFET N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in I2PAKFP package
ライフサイクル: メーカー新製品
データシート: STFI12N60M2 データシート
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STFI12N60M2 Overview

This product is manufactured by STMicroelectronics. The product can operate at a maximum temperature of Through Hole. TO-262-3 package/case type is utilized by this product. This product is equipped with 1 Channel for efficient performance. Vds rating of 600 V 9 A continuous drain current Rds On value of 450 mOhms Gate-Source Threshold Voltage Range: 4 V Gate-Source Voltage: 25 V The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 150 C. 25 W This product has a Single configuration. The Channel Mode is set to Enhancement. The height of the product is 4.6 mm. 10.85 mm long Power MOSFET The Transistor Type is 1 N-Channel. This device belongs to the MDmesh M2 type. STMicroelectronics is a trusted brand for quality electronics 18 ns fall time MOSFET product type Rise Time is 9.2 ns. 1500 of 100 MOSFETs as subcategory Turn-off delay time is 56 ns. The typical turn-on delay time is 9.2 ns. 1. 0.050717 oz of Unit Weight

STFI12N60M2 Image

STFI12N60M2

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STFI12N60M2 Specifications
  • Manufacturer: STMicroelectronics
  • Product Category: MOSFET
  • RoHS: Y
  • Technology: Si
  • Mounting Style: Through Hole
  • Package / Case: TO-262-3
  • Number of Channels: 1 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 600 V
  • Id - Continuous Drain Current: 9 A
  • Rds On - Drain-Source Resistance: 450 mOhms
  • Vgs th - Gate-Source Threshold Voltage: 4 V
  • Vgs - Gate-Source Voltage: 25 V
  • Qg - Gate Charge: 16 nC
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 150 C
  • Pd - Power Dissipation: 25 W
  • Configuration: Single
  • Channel Mode: Enhancement
  • Height: 4.6 mm
  • Length: 10.85 mm
  • Product: Power MOSFET
  • Series: STFI12N60M2
  • Transistor Type: 1 N-Channel
  • Type: MDmesh M2
  • Width: 10.4 mm
  • Brand: STMicroelectronics
  • Fall Time: 18 ns
  • Product Type: MOSFET
  • Rise Time: 9.2 ns
  • Factory Pack Quantity: 1500
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 56 ns
  • Typical Turn-On Delay Time: 9.2 ns
  • Unit Weight: 0.050717 oz

STFI12N60M2

STFI12N60M2 Specifications

STFI12N60M2 FAQ
  • A: Is the cutoff frequency of the product Manufacturer?

    Q: Yes, the product's Manufacturer is indeed STMicroelectronics

  • A: Is the cutoff frequency of the product Mounting Style?

    Q: Yes, the product's Mounting Style is indeed Through Hole

  • A: What is the Package / Case of the product?

    Q: The Package / Case of the product is TO-262-3.

  • A: At what frequency does the Number of Channels?

    Q: The product Number of Channels is 1 Channel.

  • A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?

    Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 600 V

  • A: What is the Id - Continuous Drain Current of the product?

    Q: The Id - Continuous Drain Current of the product is 9 A.

  • A: What is the Rds On - Drain-Source Resistance of the product?

    Q: The Rds On - Drain-Source Resistance of the product is 450 mOhms.

  • A: What is the Vgs th - Gate-Source Threshold Voltage of the product?

    Q: The Vgs th - Gate-Source Threshold Voltage of the product is 4 V.

  • A: What is the Vgs - Gate-Source Voltage of the product?

    Q: The Vgs - Gate-Source Voltage of the product is 25 V.

  • A: Is the cutoff frequency of the product Minimum Operating Temperature?

    Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C

  • A: What is the Maximum Operating Temperature of the product?

    Q: The Maximum Operating Temperature of the product is + 150 C.

  • A: What is the Pd - Power Dissipation of the product?

    Q: The Pd - Power Dissipation of the product is 25 W.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: Is the cutoff frequency of the product Channel Mode?

    Q: Yes, the product's Channel Mode is indeed Enhancement

  • A: Is the cutoff frequency of the product Height?

    Q: Yes, the product's Height is indeed 4.6 mm

  • A: What is the Length of the product?

    Q: The Length of the product is 10.85 mm.

  • A: What is the Product of the product?

    Q: The Product of the product is Power MOSFET.

  • A: Is the cutoff frequency of the product Transistor Type?

    Q: Yes, the product's Transistor Type is indeed 1 N-Channel

  • A: At what frequency does the Type?

    Q: The product Type is MDmesh M2.

  • A: Is the cutoff frequency of the product Brand?

    Q: Yes, the product's Brand is indeed STMicroelectronics

  • A: Is the cutoff frequency of the product Fall Time?

    Q: Yes, the product's Fall Time is indeed 18 ns

  • A: What is the Product Type of the product?

    Q: The Product Type of the product is MOSFET.

  • A: Is the cutoff frequency of the product Rise Time?

    Q: Yes, the product's Rise Time is indeed 9.2 ns

  • A: What is the Factory Pack Quantity of the product?

    Q: The Factory Pack Quantity of the product is 1500.

  • A: What is the Subcategory of the product?

    Q: The Subcategory of the product is MOSFETs.

  • A: What is the Typical Turn-Off Delay Time of the product?

    Q: The Typical Turn-Off Delay Time of the product is 56 ns.

  • A: What is the Typical Turn-On Delay Time of the product?

    Q: The Typical Turn-On Delay Time of the product is 9.2 ns.

  • A: What is the Unit Weight of the product?

    Q: The Unit Weight of the product is 0.050717 oz.

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