STGF4M65DF2

STGF4M65DF2 Overview

This product is manufactured by STMicroelectronics. TO-220FP-3 package/case type is utilized by this product. The product can operate at a maximum temperature of Through Hole. This product has a Single configuration. The maximum 650 V. The 1.6 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 8 A 23 W The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. Max continuous collector current of 8 A STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: +/- 250 uA IGBT Transistors product type 1000 of 100 IGBTs as subcategory 1. 0.068784 oz of Unit Weight

STGF4M65DF2 Image

STGF4M65DF2 Specifications

• Manufacturer: STMicroelectronics
• Product Category: IGBT Transistors
• RoHS: Y
• Technology: Si
• Package / Case: TO-220FP-3
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 650 V
• Collector-Emitter Saturation Voltage: 1.6 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current at 25 C: 8 A
• Pd - Power Dissipation: 23 W
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Series: STGF4M65DF2
• Continuous Collector Current Ic Max: 8 A
• Brand: STMicroelectronics
• Gate-Emitter Leakage Current: +/- 250 uA
• Product Type: IGBT Transistors
• Factory Pack Quantity: 1000
• Subcategory: IGBTs
• Unit Weight: 0.068784 oz

STGF4M65DF2 FAQ

• A: What is the Manufacturer of the product?

  Q: The Manufacturer of the product is STMicroelectronics.

• A: At what frequency does the Package / Case?

  Q: The product Package / Case is TO-220FP-3.

• A: Is the cutoff frequency of the product Mounting Style?

  Q: Yes, the product's Mounting Style is indeed Through Hole

• A: At what frequency does the Configuration?

  Q: The product Configuration is Single.

• A: At what frequency does the Collector- Emitter Voltage VCEO Max?

  Q: The product Collector- Emitter Voltage VCEO Max is 650 V.

• A: What is the Collector-Emitter Saturation Voltage of the product?

  Q: The Collector-Emitter Saturation Voltage of the product is 1.6 V.

• A: What is the Maximum Gate Emitter Voltage of the product?

  Q: The Maximum Gate Emitter Voltage of the product is 20 V.

• A: What is the Continuous Collector Current at 25 C of the product?

  Q: The Continuous Collector Current at 25 C of the product is 8 A.

• A: What is the Pd - Power Dissipation of the product?

  Q: The Pd - Power Dissipation of the product is 23 W.

• A: Is the cutoff frequency of the product Minimum Operating Temperature?

  Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C

• A: What is the Maximum Operating Temperature of the product?

  Q: The Maximum Operating Temperature of the product is + 175 C.

• A: Is the cutoff frequency of the product Continuous Collector Current Ic Max?

  Q: Yes, the product's Continuous Collector Current Ic Max is indeed 8 A

• A: What is the Brand of the product?

  Q: The Brand of the product is STMicroelectronics.

• A: At what frequency does the Gate-Emitter Leakage Current?

  Q: The product Gate-Emitter Leakage Current is +/- 250 uA.

• A: What is the Product Type of the product?

  Q: The Product Type of the product is IGBT Transistors.

• A: Is the cutoff frequency of the product Factory Pack Quantity?

  Q: Yes, the product's Factory Pack Quantity is indeed 1000

• A: Is the cutoff frequency of the product Subcategory?

  Q: Yes, the product's Subcategory is indeed IGBTs

• A: Is the cutoff frequency of the product Unit Weight?

  Q: Yes, the product's Unit Weight is indeed 0.068784 oz