BD237

Mfr. #: BD237
メーカー: STMicroelectronics
説明: Bipolar Transistors - BJT NPN General Purpose
ライフサイクル: メーカー新製品
データシート: BD237 データシート
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
BD237 Overview

Product belongs to the 500V Transistors series. Tube is the packaging method for this product SMD/SMT Mounting-Style TO-225AA, TO-126-3 Through Hole mounting type Supplier device package: SOT-32-3 Configuration Single Transistor type: NPN Maximum current collector Ic is 2A . Maximum collector-emitter breakdown voltage of 80V DC current gain minimum (hFE) of Ic/Vce at 25 @ 1A, 2V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 600mV @ 100mA, 1A Power-off control: 25 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 80 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 0.6 V The 80 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 2 A Gain-Bandwidth-Product: 3 MHz This product is capable of handling a 2 A continuous collector current. Minimum hfe for DC collector-base gain is 40.

BD237 Image

BD237

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BD237 Specifications
  • Manufacturer ST
  • Product Category IC Chips
  • Series 500V Transistors
  • Packaging Tube
  • Mounting-Style SMD/SMT
  • Package-Case TO-225AA, TO-126-3
  • Mounting-Type Through Hole
  • Supplier-Device-Package SOT-32-3
  • Configuration Single
  • Power-Max 25W
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 2A
  • Voltage-Collector-Emitter-Breakdown-Max 80V
  • DC-Current-Gain-hFE-Min-Ic-Vce 25 @ 1A, 2V
  • Vce-Saturation-Max-Ib-Ic 600mV @ 100mA, 1A
  • Current-Collector-Cutoff-Max 100μA (ICBO)
  • Frequency-Transition -
  • Pd-Power-Dissipation 25 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Collector-Emitter-Voltage-VCEO-Max 80 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage 0.6 V
  • Collector-Base-Voltage-VCBO 80 V
  • Emitter-Base-Voltage-VEBO 5 V
  • Maximum-DC-Collector-Current 2 A
  • Gain-Bandwidth-Product-fT 3 MHz
  • Continuous-Collector-Current 2 A
  • DC-Collector-Base-Gain-hfe-Min 40

BD237

BD237 Specifications

BD237 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is 500V Transistors.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-225AA, TO-126-3

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Through Hole.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is SOT-32-3.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed NPN

  • A: At what frequency does the Current-Collector-Ic-Max?

    Q: The product Current-Collector-Ic-Max is 2A.

  • A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?

    Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 80V

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 25 @ 1A, 2V

  • A: At what frequency does the Vce-Saturation-Max-Ib-Ic?

    Q: The product Vce-Saturation-Max-Ib-Ic is 600mV @ 100mA, 1A.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 25 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 65 C.

  • A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?

    Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 80 V

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is NPN.

  • A: What is the Collector-Emitter-Saturation-Voltage of the product?

    Q: The Collector-Emitter-Saturation-Voltage of the product is 0.6 V.

  • A: Is the cutoff frequency of the product Collector-Base-Voltage-VCBO?

    Q: Yes, the product's Collector-Base-Voltage-VCBO is indeed 80 V

  • A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?

    Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 5 V

  • A: Is the cutoff frequency of the product Maximum-DC-Collector-Current?

    Q: Yes, the product's Maximum-DC-Collector-Current is indeed 2 A

  • A: What is the Gain-Bandwidth-Product-fT of the product?

    Q: The Gain-Bandwidth-Product-fT of the product is 3 MHz.

  • A: At what frequency does the Continuous-Collector-Current?

    Q: The product Continuous-Collector-Current is 2 A.

  • A: What is the DC-Collector-Base-Gain-hfe-Min of the product?

    Q: The DC-Collector-Base-Gain-hfe-Min of the product is 40.

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1
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$0.18
10
$0.17
$1.67
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$0.16
$15.79
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$74.55
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