| Mfr. #: | CSD13201W10 |
|---|---|
| メーカー: | Texas Instruments |
| 説明: | Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R |
| ライフサイクル: | メーカー新製品 |
| データシート: | CSD13201W10 データシート |
Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 4-UFBGA, DSBGA Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 4-DSBGA (1x1) Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 12V This product has an 462pF @ 6V value of 300pF @ 25V. This product's Standard. 1.6A (Ta) continuous drain-ID current at 25°C; This product has an 34 mOhm @ 1A, 4.5V of 12 Ohm @ 150mA, 0V. Power-off control: 1.2 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 9.7 ns of 16 ns. This product has a 5.9 ns of 16 ns. This product's 8 V. The ID of continuous drain current is 1.6 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 12 V. This product has a 800 mV Vgs-th gate-source threshold voltage for efficient power management. The 34 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 14.4 ns This product has a 3.9 ns. Qg-Gate-Charge is 2.3 nC. This product features a 23 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD13201W10 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed NexFET
A: At what frequency does the Packaging?
Q: The product Packaging is Digi-ReelR Alternate Packaging.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is SMD/SMT.
A: Is the cutoff frequency of the product Tradename?
Q: Yes, the product's Tradename is indeed NexFET
A: At what frequency does the Package-Case?
Q: The product Package-Case is 4-UFBGA, DSBGA.
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: At what frequency does the Operating-Temperature?
Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Surface Mount
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: What is the Supplier-Device-Package of the product?
Q: The Supplier-Device-Package of the product is 4-DSBGA (1x1).
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: At what frequency does the FET-Type?
Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 1 N-Channel.
A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?
Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 12V
A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?
Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 462pF @ 6V
A: Is the cutoff frequency of the product FET-Feature?
Q: Yes, the product's FET-Feature is indeed Standard
A: At what frequency does the Current-Continuous-Drain-Id-25°C?
Q: The product Current-Continuous-Drain-Id-25°C is 1.6A (Ta).
A: At what frequency does the Rds-On-Max-Id-Vgs?
Q: The product Rds-On-Max-Id-Vgs is 34 mOhm @ 1A, 4.5V.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 1.2 W
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 9.7 ns
A: What is the Rise-Time of the product?
Q: The Rise-Time of the product is 5.9 ns.
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is 8 V.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 1.6 A.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 12 V.
A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?
Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 800 mV
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 34 mOhms.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: What is the Typical-Turn-Off-Delay-Time of the product?
Q: The Typical-Turn-Off-Delay-Time of the product is 14.4 ns.
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 3.9 ns.
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 2.3 nC.
A: At what frequency does the Forward-Transconductance-Min?
Q: The product Forward-Transconductance-Min is 23 S.
A: What is the Channel-Mode of the product?
Q: The Channel-Mode of the product is Enhancement.