CSD13381F4

Mfr. #: CSD13381F4
メーカー: Texas Instruments
説明: MOSFET N-CH 12V 2.1A 3PICOSTAR
ライフサイクル: メーカー新製品
データシート: CSD13381F4 データシート
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD13381F4 Overview

Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 3-XFDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 3-PICOSTAR Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 12V This product has an 200pF @ 6V value of 300pF @ 25V. This product's Standard. 2.1A (Ta) continuous drain-ID current at 25°C; This product has an 180 mOhm @ 500mA, 4.5V of 12 Ohm @ 150mA, 0V. Power-off control: 500 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 3.8 ns of 16 ns. This product has a 1.5 ns of 16 ns. This product's 8 V. The ID of continuous drain current is 7 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 12 V. This product has a 850 mV Vgs-th gate-source threshold voltage for efficient power management. The 180 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 11 ns This product has a 3.7 ns. Qg-Gate-Charge is 1.06 nC.

CSD13381F4 Image

CSD13381F4

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD13381F4 Specifications
  • Manufacturer Texas Instruments
  • Product Category FETs - Single
  • Series NexFET
  • Packaging Digi-ReelR Alternate Packaging
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case 3-XFDFN
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package 3-PICOSTAR
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 500mW
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 12V
  • Input-Capacitance-Ciss-Vds 200pF @ 6V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 2.1A (Ta)
  • Rds-On-Max-Id-Vgs 180 mOhm @ 500mA, 4.5V
  • Vgs-th-Max-Id 1.1V @ 250μA
  • Gate-Charge-Qg-Vgs 1.4nC @ 4.5V
  • Pd-Power-Dissipation 500 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 3.8 ns
  • Rise-Time 1.5 ns
  • Vgs-Gate-Source-Voltage 8 V
  • Id-Continuous-Drain-Current 7 A
  • Vds-Drain-Source-Breakdown-Voltage 12 V
  • Vgs-th-Gate-Source-Threshold-Voltage 850 mV
  • Rds-On-Drain-Source-Resistance 180 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 11 ns
  • Typical-Turn-On-Delay-Time 3.7 ns
  • Qg-Gate-Charge 1.06 nC

CSD13381F4

CSD13381F4 Specifications

CSD13381F4 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is NexFET.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: Is the cutoff frequency of the product Tradename?

    Q: Yes, the product's Tradename is indeed NexFET

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is 3-XFDFN.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: Is the cutoff frequency of the product Operating-Temperature?

    Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Surface Mount.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is 3-PICOSTAR.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: At what frequency does the Drain-to-Source-Voltage-Vdss?

    Q: The product Drain-to-Source-Voltage-Vdss is 12V.

  • A: What is the Input-Capacitance-Ciss-Vds of the product?

    Q: The Input-Capacitance-Ciss-Vds of the product is 200pF @ 6V.

  • A: What is the FET-Feature of the product?

    Q: The FET-Feature of the product is Standard.

  • A: At what frequency does the Current-Continuous-Drain-Id-25°C?

    Q: The product Current-Continuous-Drain-Id-25°C is 2.1A (Ta).

  • A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

    Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 180 mOhm @ 500mA, 4.5V

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 500 mW

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 3.8 ns.

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 1.5 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 8 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 7 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 12 V.

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 850 mV

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 180 mOhms

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 11 ns.

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 3.7 ns.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 1.06 nC.

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