CSD16406

Mfr. #: CSD16406
メーカー: Texas Instruments
説明:
ライフサイクル: メーカー新製品
データシート: CSD16406 データシート
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD16406 Overview

Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 8-PowerTDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 8-VSON (5x6) Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 25V This product has an 1100pF @ 12.5V value of 300pF @ 25V. This product's Standard. 19A (Ta), 60A (Tc) continuous drain-ID current at 25°C; This product has an 5.3 mOhm @ 20A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 2.7 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 4.8 ns of 16 ns. This product has a 12.9 ns of 16 ns. This product's 16 V. The ID of continuous drain current is 19 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 25 V. This product has a 1.7 V Vgs-th gate-source threshold voltage for efficient power management. The 5.9 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 8.5 ns This product has a 7.3 ns. Qg-Gate-Charge is 5.8 nC. This product features a 53 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

CSD16406 Image

CSD16406

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD16406 Specifications
  • Manufacturer TI
  • Product Category FETs - Single
  • Series NexFET
  • Packaging Digi-ReelR Alternate Packaging
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case 8-PowerTDFN
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package 8-VSON (5x6)
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 2.7W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 25V
  • Input-Capacitance-Ciss-Vds 1100pF @ 12.5V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 19A (Ta), 60A (Tc)
  • Rds-On-Max-Id-Vgs 5.3 mOhm @ 20A, 10V
  • Vgs-th-Max-Id 2.2V @ 250μA
  • Gate-Charge-Qg-Vgs 8.1nC @ 4.5V
  • Pd-Power-Dissipation 2.7 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 4.8 ns
  • Rise-Time 12.9 ns
  • Vgs-Gate-Source-Voltage 16 V
  • Id-Continuous-Drain-Current 19 A
  • Vds-Drain-Source-Breakdown-Voltage 25 V
  • Vgs-th-Gate-Source-Threshold-Voltage 1.7 V
  • Rds-On-Drain-Source-Resistance 5.9 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 8.5 ns
  • Typical-Turn-On-Delay-Time 7.3 ns
  • Qg-Gate-Charge 5.8 nC
  • Forward-Transconductance-Min 53 S
  • Channel-Mode Enhancement

CSD16406

CSD16406 Specifications

CSD16406 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is NexFET.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is NexFET.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is 8-PowerTDFN.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: Is the cutoff frequency of the product Operating-Temperature?

    Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Surface Mount.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is 8-VSON (5x6).

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: At what frequency does the FET-Type?

    Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: At what frequency does the Drain-to-Source-Voltage-Vdss?

    Q: The product Drain-to-Source-Voltage-Vdss is 25V.

  • A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

    Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 1100pF @ 12.5V

  • A: What is the FET-Feature of the product?

    Q: The FET-Feature of the product is Standard.

  • A: At what frequency does the Current-Continuous-Drain-Id-25°C?

    Q: The product Current-Continuous-Drain-Id-25°C is 19A (Ta), 60A (Tc).

  • A: What is the Rds-On-Max-Id-Vgs of the product?

    Q: The Rds-On-Max-Id-Vgs of the product is 5.3 mOhm @ 20A, 10V.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 2.7 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 4.8 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 12.9 ns

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 16 V

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 19 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 25 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 1.7 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 5.9 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 8.5 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 7.3 ns.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 5.8 nC

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 53 S.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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