CSD18542KCS

Mfr. #: CSD18542KCS
メーカー: Texas Instruments
説明: Trans MOSFET N-CH 60V 200A 3-Pin(3+Tab) TO-220 Tube
ライフサイクル: メーカー新製品
データシート: CSD18542KCS データシート
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD18542KCS Overview

Product belongs to the CSD18542KCS series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style Trade name: NexFET. TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 200 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 21 ns of 16 ns. This product has a 5 ns of 16 ns. This product's +/- 20 V. The ID of continuous drain current is 200 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 60 V. This product has a 1.5 V Vgs-th gate-source threshold voltage for efficient power management. The 5.1 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 18 ns This product has a 6 ns. Qg-Gate-Charge is 44 nC. This product features a 198 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

CSD18542KCS Image

CSD18542KCS

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD18542KCS Specifications
  • Manufacturer Texas Instruments
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD18542KCS
  • Packaging Tube
  • Unit-Weight 0.211644 oz
  • Mounting-Style Through Hole
  • Tradename NexFET
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 200 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 21 ns
  • Rise-Time 5 ns
  • Vgs-Gate-Source-Voltage +/- 20 V
  • Id-Continuous-Drain-Current 200 A
  • Vds-Drain-Source-Breakdown-Voltage 60 V
  • Vgs-th-Gate-Source-Threshold-Voltage 1.5 V
  • Rds-On-Drain-Source-Resistance 5.1 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 18 ns
  • Typical-Turn-On-Delay-Time 6 ns
  • Qg-Gate-Charge 44 nC
  • Forward-Transconductance-Min 198 S
  • Channel-Mode Enhancement

CSD18542KCS

CSD18542KCS Specifications

CSD18542KCS FAQ
  • A: At what frequency does the Series?

    Q: The product Series is CSD18542KCS.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.211644 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is NexFET.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-220-3.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 200 W

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 175 C

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 21 ns.

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 5 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is +/- 20 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 200 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 60 V.

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 1.5 V

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 5.1 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 18 ns

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 6 ns.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 44 nC

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 198 S.

  • A: At what frequency does the Channel-Mode?

    Q: The product Channel-Mode is Enhancement.

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