CSD19531KCS

Mfr. #: CSD19531KCS
メーカー: Texas Instruments
説明: MOSFET N-CH 100V 100A TO220-3
ライフサイクル: メーカー新製品
データシート: CSD19531KCS データシート
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD19531KCS Overview

Product belongs to the CSD19531KCS series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style Trade name: NexFET. TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 179 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 4.1 ns of 16 ns. This product has a 7.2 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 105 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. This product has a 2.7 V Vgs-th gate-source threshold voltage for efficient power management. The 7.7 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 16 ns This product has a 8.4 ns. Qg-Gate-Charge is 38 nC. This product operates in Enhancement channel mode for optimal performance.

CSD19531KCS Image

CSD19531KCS

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD19531KCS Specifications
  • Manufacturer TI
  • Product Category FETs - Single
  • Series CSD19531KCS
  • Packaging Tube
  • Unit-Weight 0.211644 oz
  • Mounting-Style Through Hole
  • Tradename NexFET
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 179 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 4.1 ns
  • Rise-Time 7.2 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 105 A
  • Vds-Drain-Source-Breakdown-Voltage 100 V
  • Vgs-th-Gate-Source-Threshold-Voltage 2.7 V
  • Rds-On-Drain-Source-Resistance 7.7 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 16 ns
  • Typical-Turn-On-Delay-Time 8.4 ns
  • Qg-Gate-Charge 38 nC
  • Channel-Mode Enhancement

CSD19531KCS

CSD19531KCS Specifications

CSD19531KCS FAQ
  • A: At what frequency does the Series?

    Q: The product Series is CSD19531KCS.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.211644 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: Is the cutoff frequency of the product Tradename?

    Q: Yes, the product's Tradename is indeed NexFET

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-220-3.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 179 W

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 175 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 4.1 ns

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 7.2 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 20 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 105 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 100 V.

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 2.7 V

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 7.7 mOhms

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 16 ns.

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 8.4 ns.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 38 nC.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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