CSD87334Q3D

Mfr. #: CSD87334Q3D
メーカー: Texas Instruments
説明: MOSFET 2N-CH 30V 20A 8SON
ライフサイクル: メーカー新製品
データシート: CSD87334Q3D データシート
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD87334Q3D Overview

Product belongs to the NexFET series. Tape & Reel (TR) Alternate Packaging is the packaging method for this product Weight of 0.002677 oz SMD/SMT Mounting-Style 8-PowerTDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 8-VSON (3.3x3.3) Configuration Dual This product uses an 2 N-Channel (Dual) Asymmetrical FET-Type transistor. Transistor type: 1 N-Channel 30V This product has an 1260pF @ 15V value of 300pF @ 25V. This product's Logic Level Gate. 20A continuous drain-ID current at 25°C; This product has an 6 mOhm @ 12A, 8V of 12 Ohm @ 150mA, 0V. Power-off control: 6 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 17 ns 17 ns of 16 ns. This product has a 7 ns 7 ns of 16 ns. This product's 8 V 8 V. The ID of continuous drain current is 20 A 20 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V 30 V. This product has a 750 mV 750 mV Vgs-th gate-source threshold voltage for efficient power management. The 8.3 mOhms 8.3 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 11 ns 11 ns This product has a 4 ns 4 ns. Qg-Gate-Charge is 750 mV 6.4 nC 6.4 nC. This product operates in Enhancement channel mode for optimal performance.

CSD87334Q3D Image

CSD87334Q3D

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD87334Q3D Specifications
  • Manufacturer Texas Instruments
  • Product Category FETs - Arrays
  • Series NexFET
  • Packaging Tape & Reel (TR) Alternate Packaging
  • Unit-Weight 0.002677 oz
  • Mounting-Style SMD/SMT
  • Package-Case 8-PowerTDFN
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package 8-VSON (3.3x3.3)
  • Configuration Dual
  • FET-Type 2 N-Channel (Dual) Asymmetrical
  • Power-Max 6W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 30V
  • Input-Capacitance-Ciss-Vds 1260pF @ 15V
  • FET-Feature Logic Level Gate
  • Current-Continuous-Drain-Id-25°C 20A
  • Rds-On-Max-Id-Vgs 6 mOhm @ 12A, 8V
  • Vgs-th-Max-Id 1.2V @ 250μA
  • Gate-Charge-Qg-Vgs 8.3nC @ 4.5V
  • Pd-Power-Dissipation 6 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 17 ns 17 ns
  • Rise-Time 7 ns 7 ns
  • Vgs-Gate-Source-Voltage 8 V 8 V
  • Id-Continuous-Drain-Current 20 A 20 A
  • Vds-Drain-Source-Breakdown-Voltage 30 V 30 V
  • Vgs-th-Gate-Source-Threshold-Voltage 750 mV 750 mV
  • Rds-On-Drain-Source-Resistance 8.3 mOhms 8.3 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 11 ns 11 ns
  • Typical-Turn-On-Delay-Time 4 ns 4 ns
  • Qg-Gate-Charge 750 mV 6.4 nC 6.4 nC
  • Channel-Mode Enhancement

CSD87334Q3D

CSD87334Q3D Specifications

CSD87334Q3D FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed NexFET

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tape & Reel (TR) Alternate Packaging.

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.002677 oz.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is 8-PowerTDFN.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: At what frequency does the Operating-Temperature?

    Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Surface Mount.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is 8-VSON (3.3x3.3).

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Dual

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed 2 N-Channel (Dual) Asymmetrical

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: What is the Drain-to-Source-Voltage-Vdss of the product?

    Q: The Drain-to-Source-Voltage-Vdss of the product is 30V.

  • A: At what frequency does the Input-Capacitance-Ciss-Vds?

    Q: The product Input-Capacitance-Ciss-Vds is 1260pF @ 15V.

  • A: At what frequency does the FET-Feature?

    Q: The product FET-Feature is Logic Level Gate.

  • A: At what frequency does the Current-Continuous-Drain-Id-25°C?

    Q: The product Current-Continuous-Drain-Id-25°C is 20A.

  • A: At what frequency does the Rds-On-Max-Id-Vgs?

    Q: The product Rds-On-Max-Id-Vgs is 6 mOhm @ 12A, 8V.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 6 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 17 ns 17 ns

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 7 ns 7 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 8 V 8 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 20 A 20 A

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 30 V 30 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 750 mV 750 mV.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 8.3 mOhms 8.3 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 11 ns 11 ns

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 4 ns 4 ns

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 750 mV 6.4 nC 6.4 nC

  • A: At what frequency does the Channel-Mode?

    Q: The product Channel-Mode is Enhancement.

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