| Mfr. #: | CSD87502Q2 |
|---|---|
| メーカー: | Texas Instruments |
| 説明: | MOSFET 2N-CH 30V 5A 6WSON |
| ライフサイクル: | メーカー新製品 |
| データシート: | CSD87502Q2 データシート |
Product belongs to the NexFET series. Tape & Reel (TR) Alternate Packaging is the packaging method for this product Weight of 0.000342 oz SMD/SMT Mounting-Style Trade name: NexFET. 6-WDFN Exposed Pad Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: 6-WSON (2x2) This product uses an 2 N-Channel (Dual) FET-Type transistor. Transistor type: 2 N-Channel 30V This product has an 353pF @ 15V value of 300pF @ 25V. This product's Standard. 5A continuous drain-ID current at 25°C; This product has an 32.4 mOhm @ 4A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 2.3 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 3 ns of 16 ns. This product has a 11 ns of 16 ns. This product's +/- 20 V. The ID of continuous drain current is 5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V. This product has a 1.6 V Vgs-th gate-source threshold voltage for efficient power management. The 42 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 12 ns This product has a 3 ns. Qg-Gate-Charge is 2.2 nC. This product features a 75 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD87502Q2 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed NexFET
A: What is the Packaging of the product?
Q: The Packaging of the product is Tape & Reel (TR) Alternate Packaging.
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.000342 oz
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is SMD/SMT.
A: At what frequency does the Tradename?
Q: The product Tradename is NexFET.
A: At what frequency does the Package-Case?
Q: The product Package-Case is 6-WDFN Exposed Pad.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: Is the cutoff frequency of the product Operating-Temperature?
Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Surface Mount.
A: What is the Number-of-Channels of the product?
Q: The Number-of-Channels of the product is 2 Channel.
A: What is the Supplier-Device-Package of the product?
Q: The Supplier-Device-Package of the product is 6-WSON (2x2).
A: Is the cutoff frequency of the product FET-Type?
Q: Yes, the product's FET-Type is indeed 2 N-Channel (Dual)
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 2 N-Channel.
A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?
Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 30V
A: What is the Input-Capacitance-Ciss-Vds of the product?
Q: The Input-Capacitance-Ciss-Vds of the product is 353pF @ 15V.
A: At what frequency does the FET-Feature?
Q: The product FET-Feature is Standard.
A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?
Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 5A
A: What is the Rds-On-Max-Id-Vgs of the product?
Q: The Rds-On-Max-Id-Vgs of the product is 32.4 mOhm @ 4A, 10V.
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 2.3 W.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C
A: What is the Fall-Time of the product?
Q: The Fall-Time of the product is 3 ns.
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 11 ns
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is +/- 20 V.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 5 A.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 30 V.
A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?
Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 1.6 V.
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 42 mOhms.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: At what frequency does the Typical-Turn-Off-Delay-Time?
Q: The product Typical-Turn-Off-Delay-Time is 12 ns.
A: At what frequency does the Typical-Turn-On-Delay-Time?
Q: The product Typical-Turn-On-Delay-Time is 3 ns.
A: At what frequency does the Qg-Gate-Charge?
Q: The product Qg-Gate-Charge is 2.2 nC.
A: What is the Forward-Transconductance-Min of the product?
Q: The Forward-Transconductance-Min of the product is 75 S.
A: What is the Channel-Mode of the product?
Q: The Channel-Mode of the product is Enhancement.