CSD88539ND

CSD88539ND Overview

Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.019048 oz SMD/SMT Mounting-Style Trade name: NexFET. 8-SOIC (0.154", 3.90mm Width) Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: 8-SOIC Configuration Dual This product uses an 2 N-Channel (Dual) FET-Type transistor. Transistor type: 2 N-Channel 60V This product has an 741pF @ 30V value of 300pF @ 25V. This product's Standard. 15A continuous drain-ID current at 25°C; This product has an 28 mOhm @ 5A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 2.1 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 4 ns of 16 ns. This product has a 9 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 11.7 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 60 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 23 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 7.2 nC. This product features a 19 S of 500 S for high performance.

CSD88539ND Image

CSD88539ND Specifications

• Manufacturer Texas Instruments
• Product Category FETs - Arrays
• Series NexFET
• Packaging Digi-ReelR Alternate Packaging
• Unit-Weight 0.019048 oz
• Mounting-Style SMD/SMT
• Tradename NexFET
• Package-Case 8-SOIC (0.154", 3.90mm Width)
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Surface Mount
• Number-of-Channels 2 Channel
• Supplier-Device-Package 8-SOIC
• Configuration Dual
• FET-Type 2 N-Channel (Dual)
• Power-Max 2.1W
• Transistor-Type 2 N-Channel
• Drain-to-Source-Voltage-Vdss 60V
• Input-Capacitance-Ciss-Vds 741pF @ 30V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 15A
• Rds-On-Max-Id-Vgs 28 mOhm @ 5A, 10V
• Vgs-th-Max-Id 3.6V @ 250μA
• Gate-Charge-Qg-Vgs 9.4nC @ 10V
• Pd-Power-Dissipation 2.1 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 4 ns
• Rise-Time 9 ns
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current 11.7 A
• Vds-Drain-Source-Breakdown-Voltage 60 V
• Vgs-th-Gate-Source-Threshold-Voltage 3 V
• Rds-On-Drain-Source-Resistance 23 mOhms
• Transistor-Polarity N-Channel
• Qg-Gate-Charge 7.2 nC
• Forward-Transconductance-Min 19 S

CSD88539ND FAQ

• A: What is the Series of the product?

  Q: The Series of the product is NexFET.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.019048 oz.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is SMD/SMT.

• A: At what frequency does the Tradename?

  Q: The product Tradename is NexFET.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is 8-SOIC (0.154", 3.90mm Width).

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: What is the Operating-Temperature of the product?

  Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).

• A: At what frequency does the Mounting-Type?

  Q: The product Mounting-Type is Surface Mount.

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 2 Channel.

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is 8-SOIC.

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Dual

• A: At what frequency does the FET-Type?

  Q: The product FET-Type is 2 N-Channel (Dual).

• A: What is the Transistor-Type of the product?

  Q: The Transistor-Type of the product is 2 N-Channel.

• A: What is the Drain-to-Source-Voltage-Vdss of the product?

  Q: The Drain-to-Source-Voltage-Vdss of the product is 60V.

• A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

  Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 741pF @ 30V

• A: At what frequency does the FET-Feature?

  Q: The product FET-Feature is Standard.

• A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

  Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 15A

• A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

  Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 28 mOhm @ 5A, 10V

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 2.1 W

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: Is the cutoff frequency of the product Fall-Time?

  Q: Yes, the product's Fall-Time is indeed 4 ns

• A: At what frequency does the Rise-Time?

  Q: The product Rise-Time is 9 ns.

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 20 V.

• A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

  Q: Yes, the product's Id-Continuous-Drain-Current is indeed 11.7 A

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 60 V.

• A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

  Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 3 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 23 mOhms

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: What is the Qg-Gate-Charge of the product?

  Q: The Qg-Gate-Charge of the product is 7.2 nC.

• A: At what frequency does the Forward-Transconductance-Min?

  Q: The product Forward-Transconductance-Min is 19 S.