DN2625DK6-G

DN2625DK6-G Overview

Product belongs to the - series. Tray is the packaging method for this product Weight of 0.001319 oz SMD/SMT Mounting-Style 8-VDFN Exposed Pad Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: 8-DFN (5x5) Configuration Dual This product uses an 2 N-Channel (Dual) FET-Type transistor. Transistor type: 2 N-Channel 250V This product has an 1000pF @ 25V value of 300pF @ 25V. This product's Depletion Mode. 1.1A continuous drain-ID current at 25°C; This product has an 3.5 Ohm @ 1A, 0V of 12 Ohm @ 150mA, 0V. Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 20 ns of 16 ns. This product has a 20 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 1.1 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 250 V. The 3.5 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 10 ns This product has a 10 ns. Qg-Gate-Charge is 7.04 nC. This product operates in Depletion channel mode for optimal performance.

DN2625DK6-G Image

DN2625DK6-G Specifications

• Manufacturer Microchip Technology
• Product Category FETs - Arrays
• Series -
• Packaging Tray
• Unit-Weight 0.001319 oz
• Mounting-Style SMD/SMT
• Package-Case 8-VDFN Exposed Pad
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Surface Mount
• Number-of-Channels 2 Channel
• Supplier-Device-Package 8-DFN (5x5)
• Configuration Dual
• FET-Type 2 N-Channel (Dual)
• Power-Max -
• Transistor-Type 2 N-Channel
• Drain-to-Source-Voltage-Vdss 250V
• Input-Capacitance-Ciss-Vds 1000pF @ 25V
• FET-Feature Depletion Mode
• Current-Continuous-Drain-Id-25°C 1.1A
• Rds-On-Max-Id-Vgs 3.5 Ohm @ 1A, 0V
• Vgs-th-Max-Id -
• Gate-Charge-Qg-Vgs 7.04nC @ 1.5V
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 20 ns
• Rise-Time 20 ns
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current 1.1 A
• Vds-Drain-Source-Breakdown-Voltage 250 V
• Rds-On-Drain-Source-Resistance 3.5 Ohms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 10 ns
• Typical-Turn-On-Delay-Time 10 ns
• Qg-Gate-Charge 7.04 nC
• Channel-Mode Depletion

DN2625DK6-G FAQ

• A: What is the Series of the product?

  Q: The Series of the product is -.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Tray

• A: At what frequency does the Unit-Weight?

  Q: The product Unit-Weight is 0.001319 oz.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is SMD/SMT.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is 8-VDFN Exposed Pad.

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: Is the cutoff frequency of the product Operating-Temperature?

  Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

• A: At what frequency does the Mounting-Type?

  Q: The product Mounting-Type is Surface Mount.

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 2 Channel.

• A: What is the Supplier-Device-Package of the product?

  Q: The Supplier-Device-Package of the product is 8-DFN (5x5).

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Dual

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is 2 N-Channel (Dual).

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 2 N-Channel.

• A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

  Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 250V

• A: What is the Input-Capacitance-Ciss-Vds of the product?

  Q: The Input-Capacitance-Ciss-Vds of the product is 1000pF @ 25V.

• A: Is the cutoff frequency of the product FET-Feature?

  Q: Yes, the product's FET-Feature is indeed Depletion Mode

• A: At what frequency does the Current-Continuous-Drain-Id-25°C?

  Q: The product Current-Continuous-Drain-Id-25°C is 1.1A.

• A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

  Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 3.5 Ohm @ 1A, 0V

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 150 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 20 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 20 ns.

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 20 V

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 1.1 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 250 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 3.5 Ohms

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

  Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 10 ns

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 10 ns.

• A: At what frequency does the Qg-Gate-Charge?

  Q: The product Qg-Gate-Charge is 7.04 nC.

• A: What is the Channel-Mode of the product?

  Q: The Channel-Mode of the product is Depletion.