LET9150

LET9150 Overview

Product belongs to the LET9150 series. Type: RF Power MOSFET Bulk is the packaging method for this product SMD/SMT Mounting-Style M246 Si is the technology used. The device offers a 20 dB at 860 MHz of 26dB. Power-off control: 269 W Maximum operating temperature of + 150 C The operating frequency is 2 GHz. This product's 15 V. The ID of continuous drain current is 20 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 80 V. The transistor polarity is N-Channel.

LET9150 Image

LET9150 Specifications

• Manufacturer STMicroelectronics
• Product Category Transistors - FETs, MOSFETs - Single
• Series LET9150
• Type RF Power MOSFET
• Packaging Bulk
• Mounting-Style SMD/SMT
• Package-Case M246
• Technology Si
• Gain 20 dB at 860 MHz
• Output-Power 150 W
• Pd-Power-Dissipation 269 W
• Maximum-Operating-Temperature + 150 C
• Operating-Frequency 2 GHz
• Vgs-Gate-Source-Voltage 15 V
• Id-Continuous-Drain-Current 20 A
• Vds-Drain-Source-Breakdown-Voltage 80 V
• Transistor-Polarity N-Channel

LET9150 FAQ

• A: What is the Series of the product?

  Q: The Series of the product is LET9150.

• A: What is the Type of the product?

  Q: The Type of the product is RF Power MOSFET.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Bulk.

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is SMD/SMT.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is M246.

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: Is the cutoff frequency of the product Gain?

  Q: Yes, the product's Gain is indeed 20 dB at 860 MHz

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 269 W

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 150 C.

• A: Is the cutoff frequency of the product Operating-Frequency?

  Q: Yes, the product's Operating-Frequency is indeed 2 GHz

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 15 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 20 A.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 80 V

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.