MJD112T4

Mfr. #: MJD112T4
メーカー: STMicroelectronics
説明: Darlington Transistors NPN Power Darlington
ライフサイクル: メーカー新製品
データシート: MJD112T4 データシート
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
MJD112T4 Overview

Product belongs to the MJD112T4 series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.063493 oz SMD/SMT Mounting-Style TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount mounting type Supplier device package: D-Pak Configuration Single Transistor type: NPN - Darlington Maximum current collector Ic is 2A . Maximum collector-emitter breakdown voltage of 100V DC current gain minimum (hFE) of Ic/Vce at 1000 @ 2A, 3V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 3V @ 40mA, 4A Maximum operating temperature of + 150 C Rated VCEO up to 100 V The transistor polarity is NPN. The 100 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 2 A Minimum hfe for DC collector-base gain is 200. 20 uA Maximum Collector Cut-off Current;

MJD112T4 Image

MJD112T4

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MJD112T4 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors (BJT) - Single
  • Series MJD112T4
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.063493 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting-Type Surface Mount
  • Supplier-Device-Package D-Pak
  • Configuration Single
  • Power-Max 20W
  • Transistor-Type NPN - Darlington
  • Current-Collector-Ic-Max 2A
  • Voltage-Collector-Emitter-Breakdown-Max 100V
  • DC-Current-Gain-hFE-Min-Ic-Vce 1000 @ 2A, 3V
  • Vce-Saturation-Max-Ib-Ic 3V @ 40mA, 4A
  • Current-Collector-Cutoff-Max 20μA
  • Frequency-Transition 25MHz
  • Maximum-Operating-Temperature + 150 C
  • Collector-Emitter-Voltage-VCEO-Max 100 V
  • Transistor-Polarity NPN
  • Collector-Base-Voltage-VCBO 100 V
  • Emitter-Base-Voltage-VEBO 5 V
  • Maximum-DC-Collector-Current 2 A
  • DC-Collector-Base-Gain-hfe-Min 200
  • Maximum-Collector-Cut-off-Current 20 uA

MJD112T4

MJD112T4 Specifications

MJD112T4 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is MJD112T4.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.063493 oz

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-252-3, DPak (2 Leads + Tab), SC-63

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Surface Mount.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed D-Pak

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is NPN - Darlington.

  • A: At what frequency does the Current-Collector-Ic-Max?

    Q: The product Current-Collector-Ic-Max is 2A.

  • A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?

    Q: The product Voltage-Collector-Emitter-Breakdown-Max is 100V.

  • A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 1000 @ 2A, 3V.

  • A: Is the cutoff frequency of the product Vce-Saturation-Max-Ib-Ic?

    Q: Yes, the product's Vce-Saturation-Max-Ib-Ic is indeed 3V @ 40mA, 4A

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?

    Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 100 V.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed NPN

  • A: Is the cutoff frequency of the product Collector-Base-Voltage-VCBO?

    Q: Yes, the product's Collector-Base-Voltage-VCBO is indeed 100 V

  • A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?

    Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 5 V

  • A: Is the cutoff frequency of the product Maximum-DC-Collector-Current?

    Q: Yes, the product's Maximum-DC-Collector-Current is indeed 2 A

  • A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?

    Q: The product DC-Collector-Base-Gain-hfe-Min is 200.

  • A: Is the cutoff frequency of the product Maximum-Collector-Cut-off-Current?

    Q: Yes, the product's Maximum-Collector-Cut-off-Current is indeed 20 uA

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