MJD3055T4

Mfr. #: MJD3055T4
メーカー: STMicroelectronics
説明: TRANS NPN 60V 10A DPAK
ライフサイクル: メーカー新製品
データシート: MJD3055T4 データシート
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
MJD3055T4 Overview

Product belongs to the MJD3055 series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.063493 oz SMD/SMT Mounting-Style TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount mounting type Supplier device package: D-Pak Configuration Single Transistor type: NPN Maximum current collector Ic is 10A . Maximum collector-emitter breakdown voltage of 60V DC current gain minimum (hFE) of Ic/Vce at 20 @ 4A, 4V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 8V @ 3.3A, 10A Power-off control: 20 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 60 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 1.1 V The 70 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 10 A Gain-Bandwidth-Product: 2 MHz This product is capable of handling a 10 A continuous collector current. Minimum hfe for DC collector-base gain is 20. 100 of 605.

MJD3055T4 Image

MJD3055T4

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MJD3055T4 Specifications
  • Manufacturer ON
  • Product Category Transistors (BJT) - Single
  • Series MJD3055
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.063493 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting-Type Surface Mount
  • Supplier-Device-Package D-Pak
  • Configuration Single
  • Power-Max 20W
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 10A
  • Voltage-Collector-Emitter-Breakdown-Max 60V
  • DC-Current-Gain-hFE-Min-Ic-Vce 20 @ 4A, 4V
  • Vce-Saturation-Max-Ib-Ic 8V @ 3.3A, 10A
  • Current-Collector-Cutoff-Max 50μA
  • Frequency-Transition 2MHz
  • Pd-Power-Dissipation 20 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Collector-Emitter-Voltage-VCEO-Max 60 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage 1.1 V
  • Collector-Base-Voltage-VCBO 70 V
  • Emitter-Base-Voltage-VEBO 5 V
  • Maximum-DC-Collector-Current 10 A
  • Gain-Bandwidth-Product-fT 2 MHz
  • Continuous-Collector-Current 10 A
  • DC-Collector-Base-Gain-hfe-Min 20
  • DC-Current-Gain-hFE-Max 100

MJD3055T4

MJD3055T4 Specifications

MJD3055T4 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is MJD3055.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.063493 oz.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-252-3, DPak (2 Leads + Tab), SC-63.

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Surface Mount.

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is D-Pak.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed NPN

  • A: Is the cutoff frequency of the product Current-Collector-Ic-Max?

    Q: Yes, the product's Current-Collector-Ic-Max is indeed 10A

  • A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?

    Q: The product Voltage-Collector-Emitter-Breakdown-Max is 60V.

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 20 @ 4A, 4V

  • A: Is the cutoff frequency of the product Vce-Saturation-Max-Ib-Ic?

    Q: Yes, the product's Vce-Saturation-Max-Ib-Ic is indeed 8V @ 3.3A, 10A

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 20 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 65 C.

  • A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?

    Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 60 V

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed NPN

  • A: Is the cutoff frequency of the product Collector-Emitter-Saturation-Voltage?

    Q: Yes, the product's Collector-Emitter-Saturation-Voltage is indeed 1.1 V

  • A: At what frequency does the Collector-Base-Voltage-VCBO?

    Q: The product Collector-Base-Voltage-VCBO is 70 V.

  • A: At what frequency does the Emitter-Base-Voltage-VEBO?

    Q: The product Emitter-Base-Voltage-VEBO is 5 V.

  • A: Is the cutoff frequency of the product Maximum-DC-Collector-Current?

    Q: Yes, the product's Maximum-DC-Collector-Current is indeed 10 A

  • A: At what frequency does the Gain-Bandwidth-Product-fT?

    Q: The product Gain-Bandwidth-Product-fT is 2 MHz.

  • A: Is the cutoff frequency of the product Continuous-Collector-Current?

    Q: Yes, the product's Continuous-Collector-Current is indeed 10 A

  • A: What is the DC-Collector-Base-Gain-hfe-Min of the product?

    Q: The DC-Collector-Base-Gain-hfe-Min of the product is 20.

  • A: What is the DC-Current-Gain-hFE-Max of the product?

    Q: The DC-Current-Gain-hFE-Max of the product is 100.

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1
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