PD57018-E

PD57018-E Overview

Product belongs to the PD57018-E series. Type: RF Power MOSFET Tube is the packaging method for this product SMD/SMT Mounting-Style PowerSO-10RF (Formed Lead) Si is the technology used. The device offers a 16.5 dB at 945 MHz of 26dB. Power-off control: 31.7 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C The operating frequency is 1 GHz. This product's +/- 20 V. The ID of continuous drain current is 2.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 65 V. The 760 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. This product features a 1 S of 500 S for high performance.

PD57018-E Image

PD57018-E Specifications

• Manufacturer STMicroelectronics
• Product Category Transistors - FETs, MOSFETs - Single
• Series PD57018-E
• Type RF Power MOSFET
• Packaging Tube
• Mounting-Style SMD/SMT
• Package-Case PowerSO-10RF (Formed Lead)
• Technology Si
• Gain 16.5 dB at 945 MHz
• Output-Power 18 W
• Pd-Power-Dissipation 31.7 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 65 C
• Operating-Frequency 1 GHz
• Vgs-Gate-Source-Voltage +/- 20 V
• Id-Continuous-Drain-Current 2.5 A
• Vds-Drain-Source-Breakdown-Voltage 65 V
• Rds-On-Drain-Source-Resistance 760 mOhms
• Transistor-Polarity N-Channel
• Forward-Transconductance-Min 1 S

PD57018-E FAQ

• A: At what frequency does the Series?

  Q: The product Series is PD57018-E.

• A: Is the cutoff frequency of the product Type?

  Q: Yes, the product's Type is indeed RF Power MOSFET

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Tube

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is SMD/SMT.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is PowerSO-10RF (Formed Lead).

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: Is the cutoff frequency of the product Gain?

  Q: Yes, the product's Gain is indeed 16.5 dB at 945 MHz

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 31.7 W

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 150 C.

• A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

  Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C

• A: Is the cutoff frequency of the product Operating-Frequency?

  Q: Yes, the product's Operating-Frequency is indeed 1 GHz

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is +/- 20 V.

• A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

  Q: Yes, the product's Id-Continuous-Drain-Current is indeed 2.5 A

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 65 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 760 mOhms

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: At what frequency does the Forward-Transconductance-Min?

  Q: The product Forward-Transconductance-Min is 1 S.