| Mfr. #: | PD57018TR-E |
|---|---|
| メーカー: | STMicroelectronics |
| 説明: | RF MOSFET Transistors POWER R.F. |
| ライフサイクル: | メーカー新製品 |
| データシート: | PD57018TR-E データシート |


Product belongs to the PD57018-E series. Type: RF Power MOSFET Reel is the packaging method for this product SMD/SMT Mounting-Style PowerSO-10RF (Formed Lead) Si is the technology used. The device offers a 16.5 dB at 945 MHz of 26dB. Power-off control: 31.7 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C The operating frequency is 1 GHz. This product's +/- 20 V. The ID of continuous drain current is 2.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 65 V. The 760 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

PD57018TR-E Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed PD57018-E
A: Is the cutoff frequency of the product Type?
Q: Yes, the product's Type is indeed RF Power MOSFET
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Reel
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is SMD/SMT.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is PowerSO-10RF (Formed Lead).
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Gain of the product?
Q: The Gain of the product is 16.5 dB at 945 MHz.
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 31.7 W.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C
A: Is the cutoff frequency of the product Operating-Frequency?
Q: Yes, the product's Operating-Frequency is indeed 1 GHz
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is +/- 20 V.
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 2.5 A.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 65 V.
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 760 mOhms.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.