| Mfr. #: | STAC250V2-500E |
|---|---|
| メーカー: | STMicroelectronics |
| 説明: | RF MOSFET Transistors POWER R.F. |
| ライフサイクル: | メーカー新製品 |
| データシート: | STAC250V2-500E データシート |
Type: RF Power MOSFET Bulk is the packaging method for this product SMD/SMT Mounting-Style STAC177B Si is the technology used. The device offers a 23 dB of 26dB. Maximum operating temperature of + 150 C The operating frequency is 27 MHz. This product's 20 V. The ID of continuous drain current is 1 uA. This product has a Vds-Drain-Source-Breakdown-Voltageof 900 V. The transistor polarity is N-Channel.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STAC250V2-500E Specifications
A: Is the cutoff frequency of the product Type?
Q: Yes, the product's Type is indeed RF Power MOSFET
A: What is the Packaging of the product?
Q: The Packaging of the product is Bulk.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is SMD/SMT.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed STAC177B
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: What is the Gain of the product?
Q: The Gain of the product is 23 dB.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: Is the cutoff frequency of the product Operating-Frequency?
Q: Yes, the product's Operating-Frequency is indeed 27 MHz
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 20 V
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 1 uA.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 900 V.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.