STB11NK50ZT4

Mfr. #: STB11NK50ZT4
メーカー: STMicroelectronics
説明: MOSFET N-CH 500V 10A D2PAK
ライフサイクル: メーカー新製品
データシート: STB11NK50ZT4 データシート
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STB11NK50ZT4 Overview

Product belongs to the STB11NK50Z series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 125 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 15 ns of 16 ns. This product has a 18 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 10 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 500 V. The 480 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 41 ns This product has a 14.5 ns. Qg-Gate-Charge is 49 nC. This product features a 77 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STB11NK50ZT4 Image

STB11NK50ZT4

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STB11NK50ZT4 Specifications
  • Manufacturer ST
  • Product Category IC Chips
  • Series STB11NK50Z
  • Packaging Reel
  • Unit-Weight 0.139332 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-252-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 125 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 15 ns
  • Rise-Time 18 ns
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 10 A
  • Vds-Drain-Source-Breakdown-Voltage 500 V
  • Rds-On-Drain-Source-Resistance 480 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 41 ns
  • Typical-Turn-On-Delay-Time 14.5 ns
  • Qg-Gate-Charge 49 nC
  • Forward-Transconductance-Min 77 S
  • Channel-Mode Enhancement

STB11NK50ZT4

STB11NK50ZT4 Specifications

STB11NK50ZT4 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is STB11NK50Z.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Reel

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.139332 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-252-3

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 125 W

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 15 ns

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 18 ns.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 30 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 10 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 500 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 480 mOhms

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 41 ns

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 14.5 ns

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 49 nC

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 77 S.

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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1
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$0.87
10
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$8.26
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$78.24
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$369.45
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