| Mfr. #: | STB155N3H6 |
|---|---|
| メーカー: | STMicroelectronics |
| 説明: | MOSFET N-CH 30V 80A D2PAK |
| ライフサイクル: | メーカー新製品 |
| データシート: | STB155N3H6 データシート |
RoHS compliant with Details Input bias current of Through Hole Package type is TO-247-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 900 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 3.6 A; The Rds On - Drain-Source Resistance of the product is 3.7 Ohms. The Vgs - Gate-Source Voltage attribute for this product is 20 V. Maximum Operating Temperature: + 150 C Si is the technology used. Tube is the packaging method for this product Enhancement Channel Mode Configuration Single Fall Time of 30 ns - 55 C minimum operating temperature The power dissipation is 125 W. 25 ns Rise Time 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 90 ns; The 14 ns typical turn-on delay time The Unit Weight is 1.340411 oz.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STB155N3H6 Specifications
A: What is the RoHS of the product?
Q: The RoHS of the product is Details.
A: At what frequency does the Mounting Style?
Q: The product Mounting Style is Through Hole.
A: Is the cutoff frequency of the product Package / Case?
Q: Yes, the product's Package / Case is indeed TO-247-3
A: At what frequency does the Number of Channels?
Q: The product Number of Channels is 1 Channel.
A: Is the cutoff frequency of the product Transistor Polarity?
Q: Yes, the product's Transistor Polarity is indeed N-Channel
A: At what frequency does the Vds - Drain-Source Breakdown Voltage?
Q: The product Vds - Drain-Source Breakdown Voltage is 900 V.
A: Is the cutoff frequency of the product Id - Continuous Drain Current?
Q: Yes, the product's Id - Continuous Drain Current is indeed 3.6 A
A: What is the Rds On - Drain-Source Resistance of the product?
Q: The Rds On - Drain-Source Resistance of the product is 3.7 Ohms.
A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?
Q: Yes, the product's Vgs - Gate-Source Voltage is indeed 20 V
A: Is the cutoff frequency of the product Maximum Operating Temperature?
Q: Yes, the product's Maximum Operating Temperature is indeed + 150 C
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: Is the cutoff frequency of the product Channel Mode?
Q: Yes, the product's Channel Mode is indeed Enhancement
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: At what frequency does the Fall Time?
Q: The product Fall Time is 30 ns.
A: Is the cutoff frequency of the product Minimum Operating Temperature?
Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C
A: Is the cutoff frequency of the product Pd - Power Dissipation?
Q: Yes, the product's Pd - Power Dissipation is indeed 125 W
A: What is the Rise Time of the product?
Q: The Rise Time of the product is 25 ns.
A: What is the Transistor Type of the product?
Q: The Transistor Type of the product is 1 N-Channel.
A: Is the cutoff frequency of the product Typical Turn-Off Delay Time?
Q: Yes, the product's Typical Turn-Off Delay Time is indeed 90 ns
A: Is the cutoff frequency of the product Typical Turn-On Delay Time?
Q: Yes, the product's Typical Turn-On Delay Time is indeed 14 ns
A: What is the Unit Weight of the product?
Q: The Unit Weight of the product is 1.340411 oz.