STB200NF04T4

STB200NF04T4 Overview

Product belongs to the STripFET II series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Si is the technology used. Operational temperature range: -55°C ~ 175°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: D2PAK Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 40V This product has an 5100pF @ 25V value of 300pF @ 25V. This product's Standard. 120A (Tc) continuous drain-ID current at 25°C; This product has an 3.7 mOhm @ 90A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 310 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 120 ns of 16 ns. This product has a 320 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 120 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 40 V. The 3.7 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 140 ns This product has a 30 ns. This product operates in Enhancement channel mode for optimal performance.

STB200NF04T4 Image

STB200NF04T4 Specifications

• Manufacturer STMicroelectronics
• Product Category IC Chips
• Series STripFET II
• Packaging Digi-ReelR Alternate Packaging
• Unit-Weight 0.139332 oz
• Mounting-Style SMD/SMT
• Package-Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Technology Si
• Operating-Temperature -55°C ~ 175°C (TJ)
• Mounting-Type Surface Mount
• Number-of-Channels 1 Channel
• Supplier-Device-Package D2PAK
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 310W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 40V
• Input-Capacitance-Ciss-Vds 5100pF @ 25V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 120A (Tc)
• Rds-On-Max-Id-Vgs 3.7 mOhm @ 90A, 10V
• Vgs-th-Max-Id 4V @ 250μA
• Gate-Charge-Qg-Vgs 210nC @ 10V
• Pd-Power-Dissipation 310 W
• Maximum-Operating-Temperature + 175 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 120 ns
• Rise-Time 320 ns
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current 120 A
• Vds-Drain-Source-Breakdown-Voltage 40 V
• Rds-On-Drain-Source-Resistance 3.7 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 140 ns
• Typical-Turn-On-Delay-Time 30 ns
• Channel-Mode Enhancement

STB200NF04T4 FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed STripFET II

• A: At what frequency does the Packaging?

  Q: The product Packaging is Digi-ReelR Alternate Packaging.

• A: Is the cutoff frequency of the product Unit-Weight?

  Q: Yes, the product's Unit-Weight is indeed 0.139332 oz

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is SMD/SMT.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-263-3, D2Pak (2 Leads + Tab), TO-263AB.

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: Is the cutoff frequency of the product Operating-Temperature?

  Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 175°C (TJ)

• A: At what frequency does the Mounting-Type?

  Q: The product Mounting-Type is Surface Mount.

• A: At what frequency does the Number-of-Channels?

  Q: The product Number-of-Channels is 1 Channel.

• A: Is the cutoff frequency of the product Supplier-Device-Package?

  Q: Yes, the product's Supplier-Device-Package is indeed D2PAK

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single.

• A: At what frequency does the FET-Type?

  Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.

• A: What is the Transistor-Type of the product?

  Q: The Transistor-Type of the product is 1 N-Channel.

• A: What is the Drain-to-Source-Voltage-Vdss of the product?

  Q: The Drain-to-Source-Voltage-Vdss of the product is 40V.

• A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

  Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 5100pF @ 25V

• A: What is the FET-Feature of the product?

  Q: The FET-Feature of the product is Standard.

• A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

  Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 120A (Tc)

• A: What is the Rds-On-Max-Id-Vgs of the product?

  Q: The Rds-On-Max-Id-Vgs of the product is 3.7 mOhm @ 90A, 10V.

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 310 W.

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 175 C.

• A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

  Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 120 ns.

• A: At what frequency does the Rise-Time?

  Q: The product Rise-Time is 320 ns.

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 20 V.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 120 A.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 40 V

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 3.7 mOhms.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: What is the Typical-Turn-Off-Delay-Time of the product?

  Q: The Typical-Turn-Off-Delay-Time of the product is 140 ns.

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 30 ns.

• A: Is the cutoff frequency of the product Channel-Mode?

  Q: Yes, the product's Channel-Mode is indeed Enhancement