STB42N65M5

STB42N65M5 Overview

Product belongs to the MDmesh V series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Si is the technology used. Operational temperature range: 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: D2PAK Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 650V This product has an 4650pF @ 100V value of 300pF @ 25V. This product's Standard. 33A (Tc) continuous drain-ID current at 25°C; This product has an 79 mOhm @ 16.5A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 190 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 13 ns of 16 ns. This product has a 24 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 33 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. The 79 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 65 ns This product has a 61 ns. This product operates in Enhancement channel mode for optimal performance.

STB42N65M5 Image

STB42N65M5 Specifications

• Manufacturer STMicroelectronics
• Product Category FETs - Single
• Series MDmesh V
• Packaging Digi-ReelR Alternate Packaging
• Unit-Weight 0.139332 oz
• Mounting-Style SMD/SMT
• Package-Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Technology Si
• Operating-Temperature 150°C (TJ)
• Mounting-Type Surface Mount
• Number-of-Channels 1 Channel
• Supplier-Device-Package D2PAK
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 190W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 650V
• Input-Capacitance-Ciss-Vds 4650pF @ 100V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 33A (Tc)
• Rds-On-Max-Id-Vgs 79 mOhm @ 16.5A, 10V
• Vgs-th-Max-Id 5V @ 250μA
• Gate-Charge-Qg-Vgs 100nC @ 10V
• Pd-Power-Dissipation 190 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 13 ns
• Rise-Time 24 ns
• Vgs-Gate-Source-Voltage 25 V
• Id-Continuous-Drain-Current 33 A
• Vds-Drain-Source-Breakdown-Voltage 650 V
• Rds-On-Drain-Source-Resistance 79 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 65 ns
• Typical-Turn-On-Delay-Time 61 ns
• Channel-Mode Enhancement

STB42N65M5 FAQ

• A: What is the Series of the product?

  Q: The Series of the product is MDmesh V.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging

• A: At what frequency does the Unit-Weight?

  Q: The product Unit-Weight is 0.139332 oz.

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed SMD/SMT

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: What is the Operating-Temperature of the product?

  Q: The Operating-Temperature of the product is 150°C (TJ).

• A: What is the Mounting-Type of the product?

  Q: The Mounting-Type of the product is Surface Mount.

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is D2PAK.

• A: At what frequency does the Configuration?

  Q: The product Configuration is Single.

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: At what frequency does the Drain-to-Source-Voltage-Vdss?

  Q: The product Drain-to-Source-Voltage-Vdss is 650V.

• A: What is the Input-Capacitance-Ciss-Vds of the product?

  Q: The Input-Capacitance-Ciss-Vds of the product is 4650pF @ 100V.

• A: Is the cutoff frequency of the product FET-Feature?

  Q: Yes, the product's FET-Feature is indeed Standard

• A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

  Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 33A (Tc)

• A: What is the Rds-On-Max-Id-Vgs of the product?

  Q: The Rds-On-Max-Id-Vgs of the product is 79 mOhm @ 16.5A, 10V.

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 190 W.

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 150 C.

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 55 C.

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 13 ns.

• A: At what frequency does the Rise-Time?

  Q: The product Rise-Time is 24 ns.

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 25 V

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 33 A.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 650 V

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 79 mOhms

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

  Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 65 ns

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 61 ns.

• A: What is the Channel-Mode of the product?

  Q: The Channel-Mode of the product is Enhancement.