STB57N65M5

STB57N65M5 Overview

Product belongs to the MDmesh V series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Si is the technology used. Operational temperature range: 150°C (TJ) Surface Mount mounting type Supplier device package: D2PAK This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. 650V This product has an 4200pF @ 100V value of 300pF @ 25V. This product's Standard. 42A (Tc) continuous drain-ID current at 25°C; This product has an 63 mOhm @ 21A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 250 W The ID of continuous drain current is 26.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. The 63 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel.

STB57N65M5 Image

STB57N65M5 Specifications

• Manufacturer ST
• Product Category FETs - Single
• Series MDmesh V
• Packaging Digi-ReelR Alternate Packaging
• Unit-Weight 0.139332 oz
• Mounting-Style SMD/SMT
• Package-Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Technology Si
• Operating-Temperature 150°C (TJ)
• Mounting-Type Surface Mount
• Supplier-Device-Package D2PAK
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 250W
• Drain-to-Source-Voltage-Vdss 650V
• Input-Capacitance-Ciss-Vds 4200pF @ 100V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 42A (Tc)
• Rds-On-Max-Id-Vgs 63 mOhm @ 21A, 10V
• Vgs-th-Max-Id 5V @ 250μA
• Gate-Charge-Qg-Vgs 98nC @ 10V
• Pd-Power-Dissipation 250 W
• Id-Continuous-Drain-Current 26.5 A
• Vds-Drain-Source-Breakdown-Voltage 650 V
• Rds-On-Drain-Source-Resistance 63 mOhms
• Transistor-Polarity N-Channel

STB57N65M5 FAQ

• A: At what frequency does the Series?

  Q: The product Series is MDmesh V.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging

• A: Is the cutoff frequency of the product Unit-Weight?

  Q: Yes, the product's Unit-Weight is indeed 0.139332 oz

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed SMD/SMT

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: What is the Operating-Temperature of the product?

  Q: The Operating-Temperature of the product is 150°C (TJ).

• A: Is the cutoff frequency of the product Mounting-Type?

  Q: Yes, the product's Mounting-Type is indeed Surface Mount

• A: What is the Supplier-Device-Package of the product?

  Q: The Supplier-Device-Package of the product is D2PAK.

• A: Is the cutoff frequency of the product FET-Type?

  Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

• A: At what frequency does the Drain-to-Source-Voltage-Vdss?

  Q: The product Drain-to-Source-Voltage-Vdss is 650V.

• A: At what frequency does the Input-Capacitance-Ciss-Vds?

  Q: The product Input-Capacitance-Ciss-Vds is 4200pF @ 100V.

• A: Is the cutoff frequency of the product FET-Feature?

  Q: Yes, the product's FET-Feature is indeed Standard

• A: What is the Current-Continuous-Drain-Id-25°C of the product?

  Q: The Current-Continuous-Drain-Id-25°C of the product is 42A (Tc).

• A: What is the Rds-On-Max-Id-Vgs of the product?

  Q: The Rds-On-Max-Id-Vgs of the product is 63 mOhm @ 21A, 10V.

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 250 W.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 26.5 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 650 V.

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 63 mOhms.

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.