STD13NM60N

STD13NM60N Overview

Product belongs to the MDmesh II series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3, DPak (2 Leads + Tab), SC-63 Si is the technology used. Operational temperature range: 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: D-Pak Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 600V This product has an 790pF @ 50V value of 300pF @ 25V. This product's Standard. 11A (Tc) continuous drain-ID current at 25°C; This product has an 360 mOhm @ 5.5A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 90 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 10 ns of 16 ns. This product has a 8 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 11 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. The 360 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 30 ns This product has a 3 ns. This product operates in Enhancement channel mode for optimal performance.

STD13NM60N Image

STD13NM60N Specifications

• Manufacturer ST
• Product Category FETs - Single
• Series MDmesh II
• Packaging Digi-ReelR Alternate Packaging
• Unit-Weight 0.139332 oz
• Mounting-Style SMD/SMT
• Package-Case TO-252-3, DPak (2 Leads + Tab), SC-63
• Technology Si
• Operating-Temperature 150°C (TJ)
• Mounting-Type Surface Mount
• Number-of-Channels 1 Channel
• Supplier-Device-Package D-Pak
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 90W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 600V
• Input-Capacitance-Ciss-Vds 790pF @ 50V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 11A (Tc)
• Rds-On-Max-Id-Vgs 360 mOhm @ 5.5A, 10V
• Vgs-th-Max-Id 4V @ 250μA
• Gate-Charge-Qg-Vgs 30nC @ 10V
• Pd-Power-Dissipation 90 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 10 ns
• Rise-Time 8 ns
• Vgs-Gate-Source-Voltage 25 V
• Id-Continuous-Drain-Current 11 A
• Vds-Drain-Source-Breakdown-Voltage 600 V
• Rds-On-Drain-Source-Resistance 360 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 30 ns
• Typical-Turn-On-Delay-Time 3 ns
• Channel-Mode Enhancement

STD13NM60N FAQ

• A: At what frequency does the Series?

  Q: The product Series is MDmesh II.

• A: At what frequency does the Packaging?

  Q: The product Packaging is Digi-ReelR Alternate Packaging.

• A: Is the cutoff frequency of the product Unit-Weight?

  Q: Yes, the product's Unit-Weight is indeed 0.139332 oz

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is SMD/SMT.

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is TO-252-3, DPak (2 Leads + Tab), SC-63.

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: What is the Operating-Temperature of the product?

  Q: The Operating-Temperature of the product is 150°C (TJ).

• A: What is the Mounting-Type of the product?

  Q: The Mounting-Type of the product is Surface Mount.

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 1 Channel

• A: Is the cutoff frequency of the product Supplier-Device-Package?

  Q: Yes, the product's Supplier-Device-Package is indeed D-Pak

• A: At what frequency does the Configuration?

  Q: The product Configuration is Single.

• A: Is the cutoff frequency of the product FET-Type?

  Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

  Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 600V

• A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

  Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 790pF @ 50V

• A: Is the cutoff frequency of the product FET-Feature?

  Q: Yes, the product's FET-Feature is indeed Standard

• A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

  Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 11A (Tc)

• A: What is the Rds-On-Max-Id-Vgs of the product?

  Q: The Rds-On-Max-Id-Vgs of the product is 360 mOhm @ 5.5A, 10V.

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 90 W.

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 55 C.

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 10 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 8 ns.

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 25 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 11 A.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 600 V

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 360 mOhms.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

  Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 30 ns

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 3 ns.

• A: Is the cutoff frequency of the product Channel-Mode?

  Q: Yes, the product's Channel-Mode is indeed Enhancement