| Mfr. #: | STD1NK60T4 |
|---|---|
| メーカー: | STMicroelectronics |
| 説明: | MOSFET N-CH 600V 1A DPAK |
| ライフサイクル: | メーカー新製品 |
| データシート: | STD1NK60T4 データシート |
Product belongs to the SuperMESH series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3, DPak (2 Leads + Tab), SC-63 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: D-Pak Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 600V This product has an 156pF @ 25V value of 300pF @ 25V. This product's Standard. 1A (Tc) continuous drain-ID current at 25°C; This product has an 8.5 Ohm @ 500mA, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 30 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 25 ns of 16 ns. This product has a 5 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 1 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. The 8 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 19 ns This product has a 6.5 ns. Qg-Gate-Charge is 7 nC. This product features a 1 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STD1NK60T4 Specifications
A: What is the Series of the product?
Q: The Series of the product is SuperMESH.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.139332 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed SMD/SMT
A: What is the Package-Case of the product?
Q: The Package-Case of the product is TO-252-3, DPak (2 Leads + Tab), SC-63.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: Is the cutoff frequency of the product Operating-Temperature?
Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Surface Mount.
A: What is the Number-of-Channels of the product?
Q: The Number-of-Channels of the product is 1 Channel.
A: What is the Supplier-Device-Package of the product?
Q: The Supplier-Device-Package of the product is D-Pak.
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: What is the FET-Type of the product?
Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed 1 N-Channel
A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?
Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 600V
A: What is the Input-Capacitance-Ciss-Vds of the product?
Q: The Input-Capacitance-Ciss-Vds of the product is 156pF @ 25V.
A: Is the cutoff frequency of the product FET-Feature?
Q: Yes, the product's FET-Feature is indeed Standard
A: At what frequency does the Current-Continuous-Drain-Id-25°C?
Q: The product Current-Continuous-Drain-Id-25°C is 1A (Tc).
A: What is the Rds-On-Max-Id-Vgs of the product?
Q: The Rds-On-Max-Id-Vgs of the product is 8.5 Ohm @ 500mA, 10V.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 30 W.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C
A: At what frequency does the Fall-Time?
Q: The product Fall-Time is 25 ns.
A: What is the Rise-Time of the product?
Q: The Rise-Time of the product is 5 ns.
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is 30 V.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 1 A.
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 600 V
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 8 Ohms
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: What is the Typical-Turn-Off-Delay-Time of the product?
Q: The Typical-Turn-Off-Delay-Time of the product is 19 ns.
A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?
Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 6.5 ns
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 7 nC
A: What is the Forward-Transconductance-Min of the product?
Q: The Forward-Transconductance-Min of the product is 1 S.
A: Is the cutoff frequency of the product Channel-Mode?
Q: Yes, the product's Channel-Mode is indeed Enhancement