STD28P3LLH6AG

STD28P3LLH6AG Overview

Weight of 0.012346 oz SMD/SMT Mounting-Style DPAK-3 Si is the technology used. Number of channels: 1 Channel Configuration 1 P-Channel Transistor type: 1 P-Channel Maximum operating temperature of + 150 C This product has a 6.9 ns of 16 ns. This product has a 1.9 ns of 16 ns. This product's +/- 18 V. The ID of continuous drain current is - 12 A. This product has a Vds-Drain-Source-Breakdown-Voltageof - 30 V. This product has a - 1 V Vgs-th gate-source threshold voltage for efficient power management. The 30 mOhms for this product is 12 Ohms. The transistor polarity is P-Channel. 'Typical-Turn-Off-Delay-Time' of 41.5 ns This product has a 10 ns. Qg-Gate-Charge is 29 nC. This product operates in Enhancement channel mode for optimal performance.

STD28P3LLH6AG Image

STD28P3LLH6AG Specifications

• Manufacturer STMicroelectronics
• Product Category Transistors - FETs, MOSFETs - Single
• Unit-Weight 0.012346 oz
• Mounting-Style SMD/SMT
• Package-Case DPAK-3
• Technology Si
• Number-of-Channels 1 Channel
• Configuration 1 P-Channel
• Transistor-Type 1 P-Channel
• Maximum-Operating-Temperature + 150 C
• Fall-Time 6.9 ns
• Rise-Time 1.9 ns
• Vgs-Gate-Source-Voltage +/- 18 V
• Id-Continuous-Drain-Current - 12 A
• Vds-Drain-Source-Breakdown-Voltage - 30 V
• Vgs-th-Gate-Source-Threshold-Voltage - 1 V
• Rds-On-Drain-Source-Resistance 30 mOhms
• Transistor-Polarity P-Channel
• Typical-Turn-Off-Delay-Time 41.5 ns
• Typical-Turn-On-Delay-Time 10 ns
• Qg-Gate-Charge 29 nC
• Channel-Mode Enhancement

STD28P3LLH6AG FAQ

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.012346 oz.

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed SMD/SMT

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is DPAK-3.

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: At what frequency does the Number-of-Channels?

  Q: The product Number-of-Channels is 1 Channel.

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed 1 P-Channel

• A: Is the cutoff frequency of the product Transistor-Type?

  Q: Yes, the product's Transistor-Type is indeed 1 P-Channel

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 150 C.

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 6.9 ns.

• A: Is the cutoff frequency of the product Rise-Time?

  Q: Yes, the product's Rise-Time is indeed 1.9 ns

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is +/- 18 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is - 12 A.

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is - 30 V.

• A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

  Q: The product Vgs-th-Gate-Source-Threshold-Voltage is - 1 V.

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 30 mOhms.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed P-Channel

• A: At what frequency does the Typical-Turn-Off-Delay-Time?

  Q: The product Typical-Turn-Off-Delay-Time is 41.5 ns.

• A: At what frequency does the Typical-Turn-On-Delay-Time?

  Q: The product Typical-Turn-On-Delay-Time is 10 ns.

• A: What is the Qg-Gate-Charge of the product?

  Q: The Qg-Gate-Charge of the product is 29 nC.

• A: Is the cutoff frequency of the product Channel-Mode?

  Q: Yes, the product's Channel-Mode is indeed Enhancement