STD3NK50ZT4

Mfr. #: STD3NK50ZT4
メーカー: STMicroelectronics
説明: MOSFET N-CH 500V 2.3A DPAK
ライフサイクル: メーカー新製品
データシート: STD3NK50ZT4 データシート
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STD3NK50ZT4 Overview

Product belongs to the SuperMESH series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3, DPak (2 Leads + Tab), SC-63 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: D-Pak Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 500V This product has an 280pF @ 25V value of 300pF @ 25V. This product's Standard. 2.3A (Tc) continuous drain-ID current at 25°C; This product has an 3.3 Ohm @ 1.15A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 45 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 14 ns of 16 ns. This product has a 13 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 2.3 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 500 V. The 2.8 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 24 ns This product has a 8 ns. Qg-Gate-Charge is 11 nC. This product features a 1.5 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STD3NK50ZT4 Image

STD3NK50ZT4

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STD3NK50ZT4 Specifications
  • Manufacturer STMicroelectronics
  • Product Category FETs - Single
  • Series SuperMESH
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.139332 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-252-3, DPak (2 Leads + Tab), SC-63
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package D-Pak
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 45W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 500V
  • Input-Capacitance-Ciss-Vds 280pF @ 25V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 2.3A (Tc)
  • Rds-On-Max-Id-Vgs 3.3 Ohm @ 1.15A, 10V
  • Vgs-th-Max-Id 4.5V @ 50μA
  • Gate-Charge-Qg-Vgs 15nC @ 10V
  • Pd-Power-Dissipation 45 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 14 ns
  • Rise-Time 13 ns
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 2.3 A
  • Vds-Drain-Source-Breakdown-Voltage 500 V
  • Rds-On-Drain-Source-Resistance 2.8 Ohms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 24 ns
  • Typical-Turn-On-Delay-Time 8 ns
  • Qg-Gate-Charge 11 nC
  • Forward-Transconductance-Min 1.5 S
  • Channel-Mode Enhancement

STD3NK50ZT4

STD3NK50ZT4 Specifications

STD3NK50ZT4 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed SuperMESH

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.139332 oz

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-252-3, DPak (2 Leads + Tab), SC-63.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: Is the cutoff frequency of the product Operating-Temperature?

    Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Surface Mount

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is D-Pak.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: At what frequency does the FET-Type?

    Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: What is the Drain-to-Source-Voltage-Vdss of the product?

    Q: The Drain-to-Source-Voltage-Vdss of the product is 500V.

  • A: At what frequency does the Input-Capacitance-Ciss-Vds?

    Q: The product Input-Capacitance-Ciss-Vds is 280pF @ 25V.

  • A: At what frequency does the FET-Feature?

    Q: The product FET-Feature is Standard.

  • A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

    Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 2.3A (Tc)

  • A: At what frequency does the Rds-On-Max-Id-Vgs?

    Q: The product Rds-On-Max-Id-Vgs is 3.3 Ohm @ 1.15A, 10V.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 45 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 14 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 13 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 30 V

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 2.3 A

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 500 V

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 2.8 Ohms

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 24 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 8 ns.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 11 nC.

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 1.5 S.

  • A: At what frequency does the Channel-Mode?

    Q: The product Channel-Mode is Enhancement.

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