| Mfr. #: | STD4N52K3 |
|---|---|
| メーカー: | STMicroelectronics |
| 説明: | MOSFET N-CH 525V 4.4A DPAK |
| ライフサイクル: | メーカー新製品 |
| データシート: | STD4N52K3 データシート |


Product belongs to the N-channel MDmesh series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 70 W Maximum operating temperature of + 150 C This product's 3 V. The ID of continuous drain current is 3.8 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 525 V. This product has a 4.5 V Vgs-th gate-source threshold voltage for efficient power management. The 1.95 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 14 nC.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STD4N52K3 Specifications
A: At what frequency does the Series?
Q: The product Series is N-channel MDmesh.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Reel
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.139332 oz.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is SMD/SMT.
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-252-3.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 1 N-Channel.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 70 W
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is 3 V.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 3.8 A.
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 525 V
A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?
Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 4.5 V.
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 1.95 Ohms.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 14 nC