| Mfr. #: | STD845DN40 |
|---|---|
| メーカー: | STMicroelectronics |
| 説明: | Bipolar Transistors - BJT Dual NPN High Volt Low Vce(sat) |
| ライフサイクル: | メーカー新製品 |
| データシート: | STD845DN40 データシート |
Product belongs to the STD845DN40 series. Tube is the packaging method for this product Weight of 0.080001 oz Through Hole Mounting-Style 8-DIP (0.300", 7.62mm) Through Hole mounting type Supplier device package: 8-DIP Configuration Dual Transistor type: 2 NPN (Dual) Maximum current collector Ic is 4A . Maximum collector-emitter breakdown voltage of 400V DC current gain minimum (hFE) of Ic/Vce at 12 @ 2A, 5V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 500mV @ 1A, 4A Power-off control: 45 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 400 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 500 mV The 700 V voltage rating is 40 V. 9 V to 18 V rating of 5 V Max DC collector current: 8 A This product is capable of handling a 4 A continuous collector current. Minimum hfe for DC collector-base gain is 10.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STD845DN40 Specifications
A: What is the Series of the product?
Q: The Series of the product is STD845DN40.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.080001 oz
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is Through Hole.
A: At what frequency does the Package-Case?
Q: The product Package-Case is 8-DIP (0.300", 7.62mm).
A: At what frequency does the Mounting-Type?
Q: The product Mounting-Type is Through Hole.
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is 8-DIP.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Dual
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 2 NPN (Dual).
A: At what frequency does the Current-Collector-Ic-Max?
Q: The product Current-Collector-Ic-Max is 4A.
A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?
Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 400V.
A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?
Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 12 @ 2A, 5V.
A: At what frequency does the Vce-Saturation-Max-Ib-Ic?
Q: The product Vce-Saturation-Max-Ib-Ic is 500mV @ 1A, 4A.
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 45 W.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 65 C.
A: At what frequency does the Collector-Emitter-Voltage-VCEO-Max?
Q: The product Collector-Emitter-Voltage-VCEO-Max is 400 V.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed NPN
A: At what frequency does the Collector-Emitter-Saturation-Voltage?
Q: The product Collector-Emitter-Saturation-Voltage is 500 mV.
A: At what frequency does the Collector-Base-Voltage-VCBO?
Q: The product Collector-Base-Voltage-VCBO is 700 V.
A: What is the Emitter-Base-Voltage-VEBO of the product?
Q: The Emitter-Base-Voltage-VEBO of the product is 9 V to 18 V.
A: What is the Maximum-DC-Collector-Current of the product?
Q: The Maximum-DC-Collector-Current of the product is 8 A.
A: What is the Continuous-Collector-Current of the product?
Q: The Continuous-Collector-Current of the product is 4 A.
A: What is the DC-Collector-Base-Gain-hfe-Min of the product?
Q: The DC-Collector-Base-Gain-hfe-Min of the product is 10.