| Mfr. #: | STF11NM60ND |
|---|---|
| メーカー: | STMicroelectronics |
| 説明: | MOSFET N-CH 600V 10A TO-220FP |
| ライフサイクル: | メーカー新製品 |
| データシート: | STF11NM60ND データシート |


RoHS compliant with Details Input bias current of SMD/SMT Package type is SSOT-3 Single 1 Channel for basic signal processing The transistor polarity is P-Channel. - 30 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as - 2 A; The Rds On - Drain-Source Resistance of the product is 125 mOhms. The Vgs - Gate-Source Voltage attribute for this product is 20 V. The - 1.9 V Gate-Source Threshold Voltage of Vgs th; 6.2 nC Gate Charge of Qg; Maximum Operating Temperature: + 150 C Si is the technology used. Reel is the packaging method for this product Configuration Single Fall Time of 6 ns - 55 C minimum operating temperature The power dissipation is 500 mW. 13 ns Rise Time 1 P-Channel Transistor Type Typical Turn-Off Delay Time of 11 ns; The 6 ns typical turn-on delay time The Unit Weight is 0.001058 oz.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STF11NM60ND Specifications
A: Is the cutoff frequency of the product RoHS?
Q: Yes, the product's RoHS is indeed Details
A: What is the Mounting Style of the product?
Q: The Mounting Style of the product is SMD/SMT.
A: What is the Package / Case of the product?
Q: The Package / Case of the product is SSOT-3.
A: What is the Number of Channels of the product?
Q: The Number of Channels of the product is 1 Channel.
A: Is the cutoff frequency of the product Transistor Polarity?
Q: Yes, the product's Transistor Polarity is indeed P-Channel
A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?
Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed - 30 V
A: At what frequency does the Id - Continuous Drain Current?
Q: The product Id - Continuous Drain Current is - 2 A.
A: What is the Rds On - Drain-Source Resistance of the product?
Q: The Rds On - Drain-Source Resistance of the product is 125 mOhms.
A: At what frequency does the Vgs - Gate-Source Voltage?
Q: The product Vgs - Gate-Source Voltage is 20 V.
A: What is the Vgs th - Gate-Source Threshold Voltage of the product?
Q: The Vgs th - Gate-Source Threshold Voltage of the product is - 1.9 V.
A: At what frequency does the Qg - Gate Charge?
Q: The product Qg - Gate Charge is 6.2 nC.
A: At what frequency does the Maximum Operating Temperature?
Q: The product Maximum Operating Temperature is + 150 C.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Reel
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: Is the cutoff frequency of the product Fall Time?
Q: Yes, the product's Fall Time is indeed 6 ns
A: At what frequency does the Minimum Operating Temperature?
Q: The product Minimum Operating Temperature is - 55 C.
A: At what frequency does the Pd - Power Dissipation?
Q: The product Pd - Power Dissipation is 500 mW.
A: What is the Rise Time of the product?
Q: The Rise Time of the product is 13 ns.
A: At what frequency does the Transistor Type?
Q: The product Transistor Type is 1 P-Channel.
A: At what frequency does the Typical Turn-Off Delay Time?
Q: The product Typical Turn-Off Delay Time is 11 ns.
A: Is the cutoff frequency of the product Typical Turn-On Delay Time?
Q: Yes, the product's Typical Turn-On Delay Time is indeed 6 ns
A: What is the Unit Weight of the product?
Q: The Unit Weight of the product is 0.001058 oz.