STF13NM60ND

STF13NM60ND Overview

Product belongs to the MDmesh II series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Full Pack Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220FP Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 600V This product has an 790pF @ 50V value of 300pF @ 25V. This product's Standard. 11A (Tc) continuous drain-ID current at 25°C; This product has an 360 mOhm @ 5.5A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 25 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 10 ns of 16 ns. This product has a 8 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 11 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. The 360 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 30 ns This product has a 3 ns. This product operates in Enhancement channel mode for optimal performance.

STF13NM60ND Image

STF13NM60ND Specifications

• Manufacturer ST
• Product Category FETs - Single
• Series MDmesh II
• Packaging Tube
• Unit-Weight 0.011640 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3 Full Pack
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-220FP
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 25W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 600V
• Input-Capacitance-Ciss-Vds 790pF @ 50V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 11A (Tc)
• Rds-On-Max-Id-Vgs 360 mOhm @ 5.5A, 10V
• Vgs-th-Max-Id 4V @ 250μA
• Gate-Charge-Qg-Vgs 30nC @ 10V
• Pd-Power-Dissipation 25 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 10 ns
• Rise-Time 8 ns
• Vgs-Gate-Source-Voltage 25 V
• Id-Continuous-Drain-Current 11 A
• Vds-Drain-Source-Breakdown-Voltage 600 V
• Rds-On-Drain-Source-Resistance 360 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 30 ns
• Typical-Turn-On-Delay-Time 3 ns
• Channel-Mode Enhancement

STF13NM60ND FAQ

• A: What is the Series of the product?

  Q: The Series of the product is MDmesh II.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.011640 oz.

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed Through Hole

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-220-3 Full Pack

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: Is the cutoff frequency of the product Operating-Temperature?

  Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

• A: Is the cutoff frequency of the product Mounting-Type?

  Q: Yes, the product's Mounting-Type is indeed Through Hole

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 1 Channel

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is TO-220FP.

• A: At what frequency does the Configuration?

  Q: The product Configuration is Single.

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: What is the Drain-to-Source-Voltage-Vdss of the product?

  Q: The Drain-to-Source-Voltage-Vdss of the product is 600V.

• A: At what frequency does the Input-Capacitance-Ciss-Vds?

  Q: The product Input-Capacitance-Ciss-Vds is 790pF @ 50V.

• A: Is the cutoff frequency of the product FET-Feature?

  Q: Yes, the product's FET-Feature is indeed Standard

• A: What is the Current-Continuous-Drain-Id-25°C of the product?

  Q: The Current-Continuous-Drain-Id-25°C of the product is 11A (Tc).

• A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

  Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 360 mOhm @ 5.5A, 10V

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 25 W.

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 150 C.

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 55 C.

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 10 ns.

• A: Is the cutoff frequency of the product Rise-Time?

  Q: Yes, the product's Rise-Time is indeed 8 ns

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 25 V.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 11 A.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 600 V

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 360 mOhms

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: At what frequency does the Typical-Turn-Off-Delay-Time?

  Q: The product Typical-Turn-Off-Delay-Time is 30 ns.

• A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

  Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 3 ns

• A: What is the Channel-Mode of the product?

  Q: The Channel-Mode of the product is Enhancement.