| Mfr. #: | STF35N60DM2 |
|---|---|
| メーカー: | STMicroelectronics |
| 説明: | MOSFET N-CH 600V 28A |
| ライフサイクル: | メーカー新製品 |
| データシート: | STF35N60DM2 データシート |
RoHS compliant with Details Input bias current of Through Hole Package type is TO-220FP-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 600 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 28 A; The Rds On - Drain-Source Resistance of the product is 110 mOhms. The Vgs - Gate-Source Voltage attribute for this product is +/- 25 V. The 3 V Gate-Source Threshold Voltage of Vgs th; 54 nC Gate Charge of Qg; Maximum Operating Temperature: + 150 C Si is the technology used. Tube is the packaging method for this product Enhancement Channel Mode Configuration 1 N-Channel Fall Time of 10.7 ns - 55 C minimum operating temperature The power dissipation is 40 W. 17 ns Rise Time Typical Turn-Off Delay Time of 68 ns; The 21.2 ns typical turn-on delay time The Unit Weight is 0.081130 oz.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STF35N60DM2 Specifications
A: What is the RoHS of the product?
Q: The RoHS of the product is Details.
A: Is the cutoff frequency of the product Mounting Style?
Q: Yes, the product's Mounting Style is indeed Through Hole
A: What is the Package / Case of the product?
Q: The Package / Case of the product is TO-220FP-3.
A: What is the Number of Channels of the product?
Q: The Number of Channels of the product is 1 Channel.
A: At what frequency does the Transistor Polarity?
Q: The product Transistor Polarity is N-Channel.
A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?
Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 600 V
A: What is the Id - Continuous Drain Current of the product?
Q: The Id - Continuous Drain Current of the product is 28 A.
A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?
Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 110 mOhms
A: At what frequency does the Vgs - Gate-Source Voltage?
Q: The product Vgs - Gate-Source Voltage is +/- 25 V.
A: At what frequency does the Vgs th - Gate-Source Threshold Voltage?
Q: The product Vgs th - Gate-Source Threshold Voltage is 3 V.
A: What is the Qg - Gate Charge of the product?
Q: The Qg - Gate Charge of the product is 54 nC.
A: Is the cutoff frequency of the product Maximum Operating Temperature?
Q: Yes, the product's Maximum Operating Temperature is indeed + 150 C
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: What is the Channel Mode of the product?
Q: The Channel Mode of the product is Enhancement.
A: At what frequency does the Configuration?
Q: The product Configuration is 1 N-Channel.
A: Is the cutoff frequency of the product Fall Time?
Q: Yes, the product's Fall Time is indeed 10.7 ns
A: What is the Minimum Operating Temperature of the product?
Q: The Minimum Operating Temperature of the product is - 55 C.
A: What is the Pd - Power Dissipation of the product?
Q: The Pd - Power Dissipation of the product is 40 W.
A: What is the Rise Time of the product?
Q: The Rise Time of the product is 17 ns.
A: At what frequency does the Typical Turn-Off Delay Time?
Q: The product Typical Turn-Off Delay Time is 68 ns.
A: What is the Typical Turn-On Delay Time of the product?
Q: The Typical Turn-On Delay Time of the product is 21.2 ns.
A: At what frequency does the Unit Weight?
Q: The product Unit Weight is 0.081130 oz.