| Mfr. #: | STF3N62K3 |
|---|---|
| メーカー: | STMicroelectronics |
| 説明: | MOSFET N-CH 620V 2.7A TO-220FP |
| ライフサイクル: | メーカー新製品 |
| データシート: | STF3N62K3 データシート |


RoHS compliant with Details Input bias current of SMD/SMT Package type is PQFN-8 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 30 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 100 A; The Rds On - Drain-Source Resistance of the product is 1.4 mOhms. The Vgs - Gate-Source Voltage attribute for this product is 20 V. The 1.8 V Gate-Source Threshold Voltage of Vgs th; 120 nC Gate Charge of Qg; Maximum Operating Temperature: + 150 C Si is the technology used. Reel is the packaging method for this product Configuration Single Fall Time of 13 ns Minimum Forward Transconductance of 190 S. - 55 C minimum operating temperature The power dissipation is 3.6 W. 30 ns Rise Time 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 31 ns; The 26 ns typical turn-on delay time

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STF3N62K3 Specifications
A: Is the cutoff frequency of the product RoHS?
Q: Yes, the product's RoHS is indeed Details
A: Is the cutoff frequency of the product Mounting Style?
Q: Yes, the product's Mounting Style is indeed SMD/SMT
A: What is the Package / Case of the product?
Q: The Package / Case of the product is PQFN-8.
A: Is the cutoff frequency of the product Number of Channels?
Q: Yes, the product's Number of Channels is indeed 1 Channel
A: What is the Transistor Polarity of the product?
Q: The Transistor Polarity of the product is N-Channel.
A: What is the Vds - Drain-Source Breakdown Voltage of the product?
Q: The Vds - Drain-Source Breakdown Voltage of the product is 30 V.
A: Is the cutoff frequency of the product Id - Continuous Drain Current?
Q: Yes, the product's Id - Continuous Drain Current is indeed 100 A
A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?
Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 1.4 mOhms
A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?
Q: Yes, the product's Vgs - Gate-Source Voltage is indeed 20 V
A: At what frequency does the Vgs th - Gate-Source Threshold Voltage?
Q: The product Vgs th - Gate-Source Threshold Voltage is 1.8 V.
A: At what frequency does the Qg - Gate Charge?
Q: The product Qg - Gate Charge is 120 nC.
A: What is the Maximum Operating Temperature of the product?
Q: The Maximum Operating Temperature of the product is + 150 C.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Reel
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: What is the Fall Time of the product?
Q: The Fall Time of the product is 13 ns.
A: Is the cutoff frequency of the product Forward Transconductance - Min?
Q: Yes, the product's Forward Transconductance - Min is indeed 190 S
A: What is the Minimum Operating Temperature of the product?
Q: The Minimum Operating Temperature of the product is - 55 C.
A: What is the Pd - Power Dissipation of the product?
Q: The Pd - Power Dissipation of the product is 3.6 W.
A: Is the cutoff frequency of the product Rise Time?
Q: Yes, the product's Rise Time is indeed 30 ns
A: Is the cutoff frequency of the product Transistor Type?
Q: Yes, the product's Transistor Type is indeed 1 N-Channel
A: What is the Typical Turn-Off Delay Time of the product?
Q: The Typical Turn-Off Delay Time of the product is 31 ns.
A: Is the cutoff frequency of the product Typical Turn-On Delay Time?
Q: Yes, the product's Typical Turn-On Delay Time is indeed 26 ns