| Mfr. #: | STH290N4F6-2AG |
|---|---|
| メーカー: | STMicroelectronics |
| 説明: | MOSFET N-CH 40V 180A H2PAK-2 |
| ライフサイクル: | メーカー新製品 |
| データシート: | STH290N4F6-2AG データシート |


RoHS compliant with Details Input bias current of SMD/SMT Package type is H2PAK-2 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 40 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 180 A; The Rds On - Drain-Source Resistance of the product is 1.7 mOhms. The Vgs - Gate-Source Voltage attribute for this product is +/- 20 V. The 2 V Gate-Source Threshold Voltage of Vgs th; 115 nC Gate Charge of Qg; Maximum Operating Temperature: + 175 C Si is the technology used. Reel is the packaging method for this product Enhancement Channel Mode Configuration 1 N-Channel Fall Time of 48 ns - 55 C minimum operating temperature The power dissipation is 300 W. 116 ns Rise Time 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 105 ns; The 20 ns typical turn-on delay time

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STH290N4F6-2AG Specifications
A: What is the RoHS of the product?
Q: The RoHS of the product is Details.
A: Is the cutoff frequency of the product Mounting Style?
Q: Yes, the product's Mounting Style is indeed SMD/SMT
A: What is the Package / Case of the product?
Q: The Package / Case of the product is H2PAK-2.
A: Is the cutoff frequency of the product Number of Channels?
Q: Yes, the product's Number of Channels is indeed 1 Channel
A: At what frequency does the Transistor Polarity?
Q: The product Transistor Polarity is N-Channel.
A: What is the Vds - Drain-Source Breakdown Voltage of the product?
Q: The Vds - Drain-Source Breakdown Voltage of the product is 40 V.
A: What is the Id - Continuous Drain Current of the product?
Q: The Id - Continuous Drain Current of the product is 180 A.
A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?
Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 1.7 mOhms
A: At what frequency does the Vgs - Gate-Source Voltage?
Q: The product Vgs - Gate-Source Voltage is +/- 20 V.
A: What is the Vgs th - Gate-Source Threshold Voltage of the product?
Q: The Vgs th - Gate-Source Threshold Voltage of the product is 2 V.
A: Is the cutoff frequency of the product Qg - Gate Charge?
Q: Yes, the product's Qg - Gate Charge is indeed 115 nC
A: Is the cutoff frequency of the product Maximum Operating Temperature?
Q: Yes, the product's Maximum Operating Temperature is indeed + 175 C
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Reel
A: At what frequency does the Channel Mode?
Q: The product Channel Mode is Enhancement.
A: At what frequency does the Configuration?
Q: The product Configuration is 1 N-Channel.
A: What is the Fall Time of the product?
Q: The Fall Time of the product is 48 ns.
A: At what frequency does the Minimum Operating Temperature?
Q: The product Minimum Operating Temperature is - 55 C.
A: Is the cutoff frequency of the product Pd - Power Dissipation?
Q: Yes, the product's Pd - Power Dissipation is indeed 300 W
A: At what frequency does the Rise Time?
Q: The product Rise Time is 116 ns.
A: At what frequency does the Transistor Type?
Q: The product Transistor Type is 1 N-Channel.
A: Is the cutoff frequency of the product Typical Turn-Off Delay Time?
Q: Yes, the product's Typical Turn-Off Delay Time is indeed 105 ns
A: Is the cutoff frequency of the product Typical Turn-On Delay Time?
Q: Yes, the product's Typical Turn-On Delay Time is indeed 20 ns