| Mfr. #: | STH310N10F7-2 |
|---|---|
| メーカー: | STMicroelectronics |
| 説明: | MOSFET N-CH 100V 180A H2PAK-2 |
| ライフサイクル: | メーカー新製品 |
| データシート: | STH310N10F7-2 データシート |


Product belongs to the DeepGATE, STripFET VII series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style Trade name: STripFET. TO-263-3, D2Pak (2 Leads + Tab) Variant Si is the technology used. Operational temperature range: -55°C ~ 175°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: H2PAK Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 100V This product has an 12800pF @ 25V value of 300pF @ 25V. This product's Standard. 180A (Tc) continuous drain-ID current at 25°C; This product has an 2.5 mOhm @ 60A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 315 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 40 ns of 16 ns. This product has a 108 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 180 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. This product has a 3.8 V Vgs-th gate-source threshold voltage for efficient power management. The 2.5 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 148 ns This product has a 62 ns. Qg-Gate-Charge is 180 nC.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STH310N10F7-2 Specifications
A: What is the Series of the product?
Q: The Series of the product is DeepGATE, STripFET VII.
A: At what frequency does the Packaging?
Q: The product Packaging is Digi-ReelR Alternate Packaging.
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.139332 oz.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is SMD/SMT.
A: Is the cutoff frequency of the product Tradename?
Q: Yes, the product's Tradename is indeed STripFET
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-263-3, D2Pak (2 Leads + Tab) Variant
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: What is the Operating-Temperature of the product?
Q: The Operating-Temperature of the product is -55°C ~ 175°C (TJ).
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Surface Mount
A: What is the Number-of-Channels of the product?
Q: The Number-of-Channels of the product is 1 Channel.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed H2PAK
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: At what frequency does the FET-Type?
Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 1 N-Channel.
A: What is the Drain-to-Source-Voltage-Vdss of the product?
Q: The Drain-to-Source-Voltage-Vdss of the product is 100V.
A: What is the Input-Capacitance-Ciss-Vds of the product?
Q: The Input-Capacitance-Ciss-Vds of the product is 12800pF @ 25V.
A: At what frequency does the FET-Feature?
Q: The product FET-Feature is Standard.
A: At what frequency does the Current-Continuous-Drain-Id-25°C?
Q: The product Current-Continuous-Drain-Id-25°C is 180A (Tc).
A: At what frequency does the Rds-On-Max-Id-Vgs?
Q: The product Rds-On-Max-Id-Vgs is 2.5 mOhm @ 60A, 10V.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 315 W.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 175 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: At what frequency does the Fall-Time?
Q: The product Fall-Time is 40 ns.
A: At what frequency does the Rise-Time?
Q: The product Rise-Time is 108 ns.
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 20 V
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 180 A
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 100 V.
A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?
Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 3.8 V
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 2.5 mOhms
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: At what frequency does the Typical-Turn-Off-Delay-Time?
Q: The product Typical-Turn-Off-Delay-Time is 148 ns.
A: At what frequency does the Typical-Turn-On-Delay-Time?
Q: The product Typical-Turn-On-Delay-Time is 62 ns.
A: At what frequency does the Qg-Gate-Charge?
Q: The product Qg-Gate-Charge is 180 nC.